TIMOTHY JAMES GERKE, CRNA
Nursing at Sam Jackson Park Rd, Portland, OR
License number
Oregon 200941580RN
Category
Nursing
Type
Registered Nurse
License number
Oregon 201600750CRNA
Category
Nursing
Type
Nurse Anesthetist, Certified Registered
Address
Address
2
3181 SW Sam Jackson Park Rd, Portland, OR 97239
605 E Fairfield St, Gladstone, OR 97027
605 E Fairfield St, Gladstone, OR 97027
Phone
(503) 494-4910
(503) 309-0706
(503) 309-0706
Personal information
See more information about TIMOTHY JAMES GERKE at radaris.comName
Address
Phone
12109 SE High Creek Rd, Happy Valley, OR 97086
Professional information
Methods And Apparatus For Patterning Photovoltaic Devices And Materials For Use With Such Devices
US Patent:
2013024, Sep 19, 2013
Filed:
Sep 6, 2011
Appl. No.:
13/820997
Inventors:
Brian W. Baird - Portland OR, US
Timothy D. Gerke - Portland OR, US
Timothy D. Gerke - Portland OR, US
Assignee:
FIANIUM LTD. - Southampton
International Classification:
H01L 31/18, H01L 21/78
US Classification:
438795, 2504922
Abstract:
A picosecond laser beam shaping assembly is disclosed for shaping a picosecond laser beam for use in patterning (e.g., scribing) semiconductor devices. The assembly comprises a pulsed fibre laser source of picosecond laser pulses, a harmonic conversion element for converting laser pulses at a first laser wavelength having a first spectral bandwidth to laser pulses at a second laser wavelength having a second spectral bandwidth, and a beam shaping apparatus for shaping the laser beam at the second laser wavelength, the beam shaping apparatus having a spectral bandwidth that substantially corresponds to the second spectral bandwidth so as to produce a laser beam having a substantially rectangular cross-sectional profile.
Chalcopyrite -Type Semiconductor Photovoltaic Device
US Patent:
2013032, Dec 12, 2013
Filed:
Sep 6, 2011
Appl. No.:
13/821009
Inventors:
Brian W. Baird - Portland OR, US
Timothy D. Gerke - Portland OR, US
Timothy D. Gerke - Portland OR, US
Assignee:
FIANIUM LTD. - Southampton
International Classification:
H01L 31/0236, H01L 31/18
US Classification:
136256, 438 69, 438 68
Abstract:
A method comprising providing a layer structure for a photovoltaic device, the layer structure comprising an electrode, a light absorber comprising a layer of chalcopyrite-type semiconductor material, such as copper indium gallium diselenide, disposed on the electrode and a transparent electrode disposed on the light absorber. The method also comprises delivering a spatially-shaped picosecond pulsed laser beam so as to remove material from a region of the transparent electrode so as to expose at least a portion of the light absorber.