Thomas Gilbert Rogers
Anesthesiologist Assistant at Hobbiton Trl, Austin, TX
License number
Colorado 2767422
Issued Date
Oct 10, 1991
Renew Date
Aug 1, 2007
Expiration Date
Jul 31, 2009
Type
Electrotherapy Chiropractic
Address
Address
11701 Hobbiton Trl, Austin, TX 78739
Personal information
See more information about Thomas Gilbert Rogers at radaris.comName
Address
Phone
511 Saint Xavier, San Antonio, TX 78232
512 Winding Creek Trl, Red Oak, TX 75154
506 Rice Rd APT 104, Tyler, TX 75703
4450 Ridgemont Dr, Abilene, TX 79606
Professional information
See more information about Thomas Gilbert Rogers at trustoria.com
Thomas Rogers - Austin, TX
Thomas Rogers - Austin, TX
Work:
Pentagon Tech - Austin, TX
Senior Inventory Clerk, Lead
Senior Inventory Clerk, Lead
Education:
CommonWealth college - Hampton, VA
Information specialist Hampton High School - Hampton, VA
Information specialist Hampton High School - Hampton, VA
Thomas T. Rogers, Austin TX - Lawyer
Thomas T. Rogers, Austin TX - Lawyer
Address:
Jackson Walker L.L.P.
100 Congress Ave STE 1100, Austin 78701
(512) 236-2030, (512) 391-2142
100 Congress Ave STE 1100, Austin 78701
(512) 236-2030, (512) 391-2142
Licenses:
Texas - Eligible To Practice In Texas 1982
Education:
University of Oklahoma College of LawDegree Doctor of Jurisprudence/Juris Doctor (J.D.)Graduated 1977
Specialties:
Commercial - 100%
Thomas Rogers, Austin TX - Lawyer
Thomas Rogers, Austin TX - Lawyer
Address:
100 Congress Ave, Austin, TX 78701
Experience:
42 years
Specialties:
Business Law
Jurisdiction:
Texas (1982)
Law School:
University Of Oklahoma
Memberships:
Texas State Bar (1982)
Quantum Well Device With Control Of Spontaneous Photon Emission, And Method Of Manufacturing Same
Quantum Well Device With Control Of Spontaneous Photon Emission, And Method Of Manufacturing Same
US Patent:
5089860, Feb 18, 1992
Filed:
Jun 25, 1990
Appl. No.:
7/543477
Inventors:
Dennis G. Deppe - Austin TX
Thomas J. Rogers - Austin TX
Thomas J. Rogers - Austin TX
International Classification:
H01L 29161, H01L 29205, H01L 2964
US Classification:
357 16
Abstract:
In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing being less than the optical emission wavelength of the quantum well. An enhancement/inhibition ratio on the order of 10 is possible according to the present invention using a single reflector, and enhancement/inhibition ratios on the order of 1000 are possible when two reflectors are used in the quantum well light-emitting diode structures. In addition, according to the present invention, the gain, directionality, and efficiency of a vertical cavity surface-emitting laser can also be greatly improved. A method of making a device according to the present invention is also presented.