Inventors:
Stephen O'Brien - New York NY, US
Limin Huang - Jersey City NJ, US
Zhuoying Chen - Cambridge, GB
Ioannis Kymissis - New York NY, US
Zhang Jia - New York NY, US
Assignee:
The Trustees of Columbia University in the City of New York - New York NY
International Classification:
A61K 8/19, H01L 51/30, H01L 27/07, H01L 29/92, H01G 9/00, H01G 4/06, C09K 3/00, C01B 13/00, C01G 25/02, C01F 17/00, C01G 45/12, C01G 49/02, C01G 53/04, C01G 51/04, C01G 23/04, C01G 19/02, C01G 41/02, C01G 11/02, C01G 31/02, B32B 27/32, H01L 21/302, B05D 5/12
US Classification:
424 59, 257 40, 257532, 257300, 361502, 361524, 361311, 25218232, 25218233, 4235931, 42359412, 423263, 423599, 4235941, 4235943, 4235945, 423598, 4235949, 42359413, 42359414, 4235948, 428220, 438758, 4271263, 257E51049, 257E27034, 257E29342, 977773, 977762, 257E21214
Abstract:
Nanocrystalline forms of metal oxides, including binary metal oxide, perovskite type metal oxides, and complex metal oxides, including doped metal oxides, are provided. Methods of preparation of the nanocrystals are also provided. The nanocrystals, including uncapped and uncoated metal oxide nanocrystals, can be dispersed in a liquid to provide dispersions that are stable and do not precipitate over a period of time ranging from hours to months. Methods of preparation of the dispersions, and methods of use of the dispersions in forming films, are likewise provided. The films can include an organic, inorganic, or mixed organic/inorganic matrix. The films can be substantially free of all organic materials. The films can be used as coatings, or can be used as dielectric layers in a variety of electronics applications, for example as a dielectric material for an ultracapacitor, which can include a mesoporous material. Or the films can be used as a high-K dielectric in organic field-effect transistors. In various embodiments, a layered gate dielectric can include spin-cast (e.g., 8 nm-diameter) high-K BaTiOnanocrystals and parylene-C for pentacene OFETs.