DR. SON NGOC NGUYEN, D.C.
Chiropractic at Burdette Dr, San Jose, CA

2013008, Apr 11, 2013

Apr 26, 2012

13/456547

Donald J.K. Olgado - Palo Alto CA, US
Yuriy Melnik - Santa Clara CA, US
Hiroji Hanawa - Sunnyvale CA, US
Karl M. Brown - Santa Clara CA, US
Son T. Nguyen - San Jose CA, US
Kevin S. Griffin - Livermore CA, US

Applied Materials, Inc. - Santa Clara CA

C30B 25/10, C30B 25/02

117103, 118723 E

Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.

6877166, Apr 5, 2005

Jan 18, 2000

09/484610

Guenter E. Roeck - San Jose CA, US
Mark E. Millet - Mountain View CA, US
Son D. Nguyen - San Jose CA, US

Cisco Technology, Inc. - San Jose CA

H04N007/173

725111, 725107, 725121, 725124, 725125, 725127, 725130, 455 68, 455522

A technique is disclosed for selectively adjusting the power and/or frequency of cable modems without relying solely on the most recent measurement of these values to determine whether a change is necessary. Rather, it considers multiple recent measurements and from these makes its assessment. In one approach, the technique employs an average of the recent measurements to determine whether a change in power or frequency is necessary. There are actually at least three determinations that can make use of multiple recent measurements. These include (1) determining whether the signals are fluctuating to an extent that requires a special adjustment technique, (2) determining whether an adjustment is necessary (using the special technique), and (3) determining how large of an adjustment is necessary.

8425977, Apr 23, 2013

Sep 29, 2008

12/240120

Nir Merry - Mountain View CA, US
Son T. Nguyen - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/455

4272481, 118715

Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.

2005025, Nov 17, 2005

Apr 29, 2005

11/119388

Son Nguyen - San Jose CA, US
Kedarnath Sangam - Sunnyvale CA, US
Miriam Schwartz - Los Gatos CA, US
Kenric Choi - Santa Clara CA, US
Sanjay Bhat - Bangalore, IN
Pravin Narwankar - Sunnyvale CA, US
Shreyas Kher - Campbell CA, US
Rahul Sharangapani - Fremont CA, US
Shankar Muthukrishnan - San Jose CA, US
Paul Deaton - San Jose CA, US

C23C016/00

118715000, 427248100

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

6187412, Feb 13, 2001

Jun 27, 1997

8/883761

Michael D. Armacost - Wallkill NY
Peter D. Hoh - Hopewell Junction NY
Son V. Nguyen - San Jose CA

International Business Machines Corporation - Armonk NY

B32B 904, B32B 1520, B32B 1800

428119

A silicon article including a silicon base and columns extending from the silicon base. The columns define a gap between the columns which is devoid of material so that the article can act as a filter or heat sink. Also disclosed is a method of making the silicon article.

5973351, Oct 26, 1999

Jan 22, 1997

8/787070

David E. Kotecki - Hopewell Junction NY
Son V. Nguyen - San Jose CA

International Business Machines Corporation - Armonk NY

H01L 2992, H01L 27108

257310

A semiconductor device having a capacitor containing an insulator material having a high dielectric constant and high charge storing capability of the following formula: (A. sup. 1). sub. x (A. sup. 2). sub. 2-x (D). sub. d (B. sup. 1). sub. y (B. sup. 2). sub. 1-y O. sub. 4 where A. sup. 1 and A. sup. 2 are cations, B. sup. 1 and B. sup. 2 are anions, 0. ltoreq. x. ltoreq. 2 with the proviso that A. sup. 1 and A. sup. 2 are different types of atoms when 0<x<2, and 0. ltoreq. y. ltoreq. 1 with the proviso that B. sup. 1 and B. sup. 2 are different types of atoms when 0<y<1, and D is an optional dopant in a total amount of 0. ltoreq. d. ltoreq. 1.

7311810, Dec 25, 2007

Apr 13, 2004

10/823849

Son T. Nguyen - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C25D 17/00

204242, 204269

Embodiments of the invention generally provide an annealing apparatus and method for a semiconductor processing platform. The annealing apparatus includes a plurality of isolated annealing chambers, wherein each of the annealing chambers has a heating plate positioned in a sealed processing volume, a cooling plate positioned in the processing volume, and a substrate transfer mechanism positioned in the processing volume and configured to transfer substrates between the heating plate and the cooling plate. The annealing system further includes a gas supply source selectively in communication with each of the individual annealing chambers.

7775508, Aug 17, 2010

Oct 31, 2006

11/554954

Kenric T. Choi - Santa Clara CA, US
Pravin K. Narwankar - Sunnyvale CA, US
Shreyas S. Kher - Campbell CA, US
Son T. Nguyen - San Jose CA, US
Paul Deaton - San Jose CA, US
Khai Ngo - Cedar Park TX, US
Paul Chhabra - Austin TX, US
Alan H. Ouye - San Mateo CA, US
Dien-Yeh (Daniel) Wu - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

B01F 3/04

261127, 261135, 261142, 261 43, 261 52, 261 61, 261123

A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.