DR. SANG THANH LE, DC
Chiropractic at Stevens Creek Blvd, San Jose, CA
License number
California DC32533
Category
Chiropractic
Type
Chiropractor
Address
Address
2858 Stevens Creek Blvd STE 208, San Jose, CA 95128
Phone
(408) 244-1440
(408) 244-1442 (Fax)
(408) 244-1442 (Fax)
Personal information
See more information about SANG THANH LE at radaris.comName
Address
Phone
5444 Reservoir Dr APT 30, San Diego, CA 92120
5428 W Flight Ave, Santa Ana, CA 92704
484 Mariposa Ave, Sierra Madre, CA 91024
3405 Myersly Ct, San Jose, CA 95148
3246 Dundonald Ct, San Jose, CA 95121
Professional information
See more information about SANG THANH LE at trustoria.com
Sang Le, San Jose CA
Sang Le, San Jose CA
Specialties:
Chiropractor
Address:
2858 Stevens Creek Blvd, San Jose, CA 95128
Process For Tungsten Nitride Deposition By A Temperature Controlled Lid Assembly
Process For Tungsten Nitride Deposition By A Temperature Controlled Lid Assembly
US Patent:
2008020, Aug 28, 2008
Filed:
Jan 29, 2008
Appl. No.:
12/021798
Inventors:
Avgerinos V. Gelatos - Redwood City CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US
International Classification:
H01L 21/44
US Classification:
438654, 257E21476
Abstract:
Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.
Temperature Controlled Lid Assembly For Tungsten Nitride Deposition
Temperature Controlled Lid Assembly For Tungsten Nitride Deposition
US Patent:
2008020, Aug 28, 2008
Filed:
Jan 29, 2008
Appl. No.:
12/021825
Inventors:
Avgerinos V. Gelatos - Redwood City CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US
International Classification:
C23C 16/06
US Classification:
118724
Abstract:
Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
Annotating Webpage Content
Annotating Webpage Content
US Patent:
2009032, Dec 31, 2009
Filed:
Jun 27, 2008
Appl. No.:
12/163778
Inventors:
Sang Van Le - San Jose CA, US
Assignee:
GOOGLE INC. - Mountain View CA
International Classification:
G06F 17/00
US Classification:
715230
Abstract:
Among other things, a computer-implemented method for annotating webpage content includes accessing a webpage in a browser, the webpage under control of a third party. A collection of annotations stored at a storage location is retrieved, the annotations collection associated with the webpage and an annotations author. The webpage is displayed with the retrieved annotations collection overlaid on the accessed webpage.