RONALD STEPHEN NOWICKI
Pilots at Kenley Way, Sunnyvale, CA

5576596, Nov 19, 1996

May 25, 1995

8/450458

Christopher J. Curtin - Cupertino CA
Ronald S. Nowicki - Sunnyvale CA
Theodore S. Fahlen - San Jose CA
Robert M. Duboc - Menlo Park CA
Paul A. Lovoi - Saratoga CA

Silicon Video Corporation - San Jose CA

H01J 2918

313422

An optical device contains first and second plates (302 and 303), a pattern of ridges (314) situated over the first plate, light-emissive regions (313) situated in spaces between the ridges, electron-emissive elements (309) situated over the second plate, and supporting structure (308) that maintains a desired spacing between the plates. The electron-emissive elements emit electrons that strike the light-emissive regions, causing them to produce light of various colors. The ridges, which extend further away from the first plate than the light-emissive regions, are substantially non-emissive of light when hit by electrons. Each ridge includes a dark region formed with metal, ceramic, semiconductor, or/and carbide. The ridges thereby form a raised black matrix that improves contrast and color purity.

5725787, Mar 10, 1998

May 25, 1995

8/452609

Christopher J. Curtin - Cupertino CA
Ronald S. Nowicki - Sunnyvale CA
Theodore S. Fahlen - San Jose CA
Robert M. Duboc - Menlo Park CA
Paul A. Lovoi - Saratoga CA

Candescent Technologies Corporation - San Jose CA

C23F 100, C25D 502

216 25

A light-emitting structure (306) contains a main section (302), a pattern of ridges (314) situated along the main section, and a plurality of light-emissive regions (313) situated in spaces between the ridges. The light-emissive regions produce light of various colors upon being hit by electrons. The ridges, which extend further away from the main section than the light-emissive regions, are substantially non-emissive of light when hit by electrons. Each ridge includes a dark region. The ridges thereby form a raised black matrix that improves contrast and color purity. When the light-emitting structure is used in an optical display, the raised black matrix contacts internal supports (308) and, in so doing, protects the light-emissive regions from being damaged. The light-emitting structure can be formed according to various techniques of the invention.

6998644, Feb 14, 2006

Aug 17, 2001

09/932406

Edward Boling - Fremont CA, US
Jeffrey Jay Jacobsen - Hollister CA, US
Ronald Stephen Nowicki - Sunnyvale CA, US

Alien Technology Corporation - Morgan Hill CA

H01L 29/06

257 88, 257207, 345204

Apparatuses and methods for forming displays are claimed. One embodiment of the invention relates to dispensing display drivers over a substrate. The display drivers, for example, may be a plurality of emitters and gates in order to form a display such as a field emission display (FED). Alternatively, the display drivers may be rods for a plasma display. Another embodiment of the invention relates to forming an electronic device along a length of substrate using template transfer or FSA to deposit display drivers into recessed regions or holes of a substrate. Another embodiment of the invention relates to using FSA and a deterministic method such as “pick and place” to place display drivers onto a substrate. Another embodiment of the invention relates to using donor transfer of display drivers to a substrate.

4424101, Jan 3, 1984

Aug 11, 1982

6/407227

Ronald S. Nowicki - Sunnyvale CA

The Perkin-Elmer Corp. - Norwalk CT

C23C 1500

204192C

A method of depositing refractory metal silicides in a sputtering system on one or more substrates in an environment which supports a glow discharge from a pair of targets at an energy level sufficient to co-sputter and deposit the material from the targets onto the substrate(s). The method includes either a RF high voltage to be applied to one of the targets, or a DC voltage in the presence of a magnetic field to be applied to both targets so as to deposit silicon, either doped or pure, and refractory metal, either doped or pure, as the case may be, to provide a thin film of doped refractory metal silicide on the substrate(s).

5903099, May 11, 1999

May 23, 1997

8/862649

A. David Johnson - San Leandro CA
Heinz H. Busta - Plainsboro NJ
Ronald S. Nowicki - Sunnyvale CA

TiNi Alloy Company - San Leandro CA

H01J9/24

313495

A fabrication system and method of fabrication for producing microelectromechanical devices such as field-effect displays using thin-film technology. A spacer is carried at its proximal end on the surface of a substrate having field-effect emitters with the spacer being enabled for tilting movement from a nested position to a deployed position which is orthogonal to the plane of the substrate. An actuator is formed with one end connected with the substrate and another end connected with spacer. The actuator is made of a shape memory alloy material which contracts when heated through the material's phase-change transition temperature. Contraction of the actuator exerts a pulling force on the spacer which is tilted to the deployed position. A plurality of the spacers are distributed over the area of the display. A glass plate having a phosphor-coated surface is fitted over the distal ends of the deployed spacer.

5477105, Dec 19, 1995

Jan 31, 1994

8/188856

Christopher J. Curtin - Cupertino CA
Ronald S. Nowicki - Sunnyvale CA
Theodore S. Fahlen - San Jose CA
Robert M. Duboc - Menlo Park CA
Paul A. Lovoi - Saratoga CA

Silicon Video Corporation - Santa Clara County CA

H01J 2918

313422

A light-emitting structure (306) contains a main section (302), a pattern of ridges (314) situated along the main section, and a plurality of light-emissive regions (313) situated in spaces between the ridges. The light-emissive regions produce light of various colors upon being hit by electrons. The ridges, which extend further away from the main section than the light-emissive regions, are substantially non-emissive of light when hit by electrons. Each ridge includes a dark region. The ridges thereby form a raised black matrix that improves contrast and color purity. The dark region of each ridge may be formed with metal, ceramic, semiconductor, or carbide. Each ridge may include an additional region (314b) of different chemical composition than the dark region.

4513905, Apr 30, 1985

May 9, 1984

6/586906

Ronald S. Nowicki - Sunnyvale CA
John F. Moulder - Sun Fish Lake MN

The Perkin-Elmer Corporation - Norwalk CT

B23K 120, H01L 21285

228123

A process in the manufacture of integrated circuits in which a barrier layer of Cr or Ti is deposited in a partial atmosphere of N. sub. 2 in an Ar sputtering gas on a layer of Si so that the N. sub. 2 is incorporated in the Cr or Ti, after which conductor material such as gold, silver, low temperature eutectic or other high temperature solders, are deposited on the barrier layer. This barrier layer reduces migration of Si and Cr through and over the conductor material so that a wettable (bondable) surface is provided which results in greater bond strength and greater reliability when the die is attached to a bonding pad by the conventional heat treat method.

5330607, Jul 19, 1994

Aug 27, 1992

7/938303

Ronald S. Nowicki - Sunnyvale CA

Genus, Inc. - Sunnyvale CA

H01L 2100

156345

An etchback apparatus for use in integrated circuit processing after via fill to remove excess metal and leave plugged vias, has a sacrificial ring with a surface consisting substantially of a metal that etches much like the metal used to fill the vias. The excess surface area in the process provides sacrificial metal so microloading is avoided. he metal used to fill the vias.