ROBERT DALE ALBIN
Pilots at Moss Holw Ct, Santa Rosa, CA
License number
California A2458128
Issued Date
Aug 2016
Expiration Date
Aug 2018
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
3835 Moss Hollow Ct, Santa Rosa, CA 95404
Professional information
Self Biasing Diode Microwave Frequency Multiplier
US Patent:
4749949, Jun 7, 1988
Filed:
Apr 29, 1986
Appl. No.:
6/857010
Inventors:
Robert D. Albin - Santa Rosa CA
Frank K. David - Santa Rosa CA
Frank K. David - Santa Rosa CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H03B 1900, H03L 700
US Classification:
328 16
Abstract:
A microwave frequency multiplier employs a first diode and a second diode each coupled in anti-parallel relationship across a signal input of a finline structure, each of the diodes being associated with signal-induced biasing elements for self biasing the diodes. A bias is caused to occur at internal nodes which increase with increased input power for a broad range of input power levels. The presence of such biasing results in waveform clipping at higher signal levels. Relative to prior art, the conversion loss will remain optimum up to high input power over an entire high-power input range. Additional external bias may be employed in alternative embodiments.
Integrated Capacitance Structures In Microwave Finline Devices
US Patent:
4789840, Dec 6, 1988
Filed:
Apr 16, 1986
Appl. No.:
6/852861
Inventors:
Robert D. Albin - Santa Rosa CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H03D 902
US Classification:
329161
Abstract:
A finline structure comprises a dielectric substrate-mounted circuit disposed within a waveguide having on the substrate integrated distributed capacitance elements at least partially formed by laterally separated metallization layers. Thin-film construction techniques may be employed in construction. In general, the distributed capacitance elements permit the biasing of a plurality of circuit elements in a finline transmission medium. In selected structures, r. f. continuity is effected between traces and metallization layers while maintaining d. c. isolation. Examples are described of circuits which can incorporate an integrated capacitor, including but not limited to detectors, r. f. modulators, r. f. attenuators, amplifiers, and multipliers.