Inventors:
Michael J. Suscavage - Shirley MA
David F. Bliss - Arlington MA
Michael J. Callahan - Bedford MA
Gerald W. Iseler - Chelmsford MA
John S. Bailey - Temple NH
Assignee:
The United States of America as represented by the Secretary of the Air Force - Washington DC
International Classification:
C30B 2306
US Classification:
117104, 117952, 20429812, 20429814, 42725536, 427255394
Abstract:
Method and apparatus are provided for forming metal nitrides (MN) wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and contacting MI with ammonia to form the MN in a process of reduced or no toxicity. MN is then deposited on a substrate, on one or more seeds or it can self nucleate on the walls of a growth chamber, to form high purity metal nitride material. The inventive MN material finds use in semiconductor materials and in making nitride electronic devices as well as other uses.