MARY CRETELLA
Broker in Bedford, MA
License number
Massachusetts 78520
Issued Date
Mar 1, 1986
Expiration Date
Apr 18, 2000
Type
Salesperson
Address
Address
Bedford, MA 01730
Professional information
Method And Apparatus For Doping Semiconductors
US Patent:
7232484, Jun 19, 2007
Filed:
Nov 24, 2004
Appl. No.:
10/997160
Inventors:
Mary C. Cretella - Bedford MA, US
Assignee:
Evergreen Solar Inc. - Marlborough MA
International Classification:
C30B 15/20
US Classification:
117 19, 117 13, 117 20
Abstract:
Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.
Method And Apparatus For Doping Semiconductors
US Patent:
2005003, Feb 17, 2005
Filed:
Aug 8, 2002
Appl. No.:
10/215391
Inventors:
Mary Cretella - Bedford MA, US
Richard Wallace - Acton MA, US
Richard Wallace - Acton MA, US
Assignee:
Evergreen Solar, Inc. - Marlborough MA
International Classification:
C30B023/00, C30B025/00, C30B028/12, C30B028/14
US Classification:
117095000
Abstract:
Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.
Method And Apparatus For Doping Semiconductors
US Patent:
2007025, Nov 1, 2007
Filed:
Apr 20, 2007
Appl. No.:
11/788475
Inventors:
Mary Cretella - Bedford MA, US
Richard Wallace - Acton MA, US
Richard Wallace - Acton MA, US
Assignee:
Evergreen Solar, Inc. - Marlborough MA
International Classification:
H01L 21/22
US Classification:
438565000
Abstract:
Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.