Inventors:
William A. Wojtczak - Santa Clara CA, US
Ma. Fatima Seijo - Hayward CA, US
David Bernhard - Dallas TX, US
Long Nguyen - San Jose CA, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C11D 7/32
US Classification:
510175, 510176, 134 13, 134 2
Abstract:
A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0. 5-40% wt. nitrogenous component, e. g. , a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.