DR. LAURA E CLARK, MD
Osteopathic Medicine at Alameda Ave, Denver, CO

2014006, Mar 6, 2014

Aug 31, 2012

13/600987

Laura Anne Clark - Brighton CO, US
Tammy Jane Lucas - Highlands Ranch CO, US
Wyatt Keith Metzger - Louisville CO, US
Samuel H. Demtsu - Thornton CO, US
David Joseph Dickerson - Thornton CO, US
Laura Jean Wilson - Peyton CO, US
Mehran Sadeghi - Orpington, GB

PRIMESTAR SOLAR, INC. - Arvada CO

H01L 31/18

438 95, 257E31124

Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.

2014006, Mar 6, 2014

Aug 31, 2012

13/601110

Donald Franklin Foust - Glenville NY, US
Hongbo Cao - Cohoes NY, US
Laura Anne Clark - Brighton CO, US
Robert Andrew Garber - Denver CO, US
Wyatt Keith Metzger - Louisville CO, US
Yinghui Shan - Cohoes NY, US
Roman Shuba - Albany CA, US

GENERAL ELECTRIC COMPANY - SHENECTADY NY

H01L 31/18

438 95, 257E31015

Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

2014006, Mar 6, 2014

Aug 31, 2012

13/601162

Donald Franklin Foust - Glenville NY, US
Hongbo Cao - Cohoes NY, US
Laura Anne Clark - Brighton CO, US
Robert Andrew Garber - Denver CO, US
Wyatt Keith Metzger - Louisville CO, US
Yinghui Shan - Cohoes NY, US
Roman Shuba - Albany CA, US

GENERAL ELECTRIC COMPANY - SCHENECTADY NY

H01L 31/0232

136256

Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

2014006, Mar 6, 2014

Aug 31, 2012

13/601022

Laura Anne Clark - Brighton CO, US
Tammy Jane Lucas - Highlands Ranch CO, US
Wyatt Keith Metzger - Louisville CO, US

PRIMESTAR SOLAR, INC. - Arvada CO

H01L 31/0224, H01L 31/18

136256, 438 98, 257E31124

Photovoltaic devices are provided that include a transparent superstrate; a transparent conductive oxide on the transparent superstrate; an n-type window layer on the transparent superstrate; a p-type absorber layer on the n-type window layer; and an inert conductive paste layer on the back surface of the p-type absorber layer. The p-type absorber layer includes cadmium telluride, and defines a back surface positioned opposite from the n-type window layer that is tellurium enriched. The inert conductive paste layer is substantially free from an acid or acid generator. Methods are also generally provided of forming such a back contact.