Inventors:
Jose Jimenez - Dallas TX, US
Assignee:
TriQuint Semiconductor, Inc. - Hillsboro OR
International Classification:
H01L 29/66
Abstract:
Embodiments include but are not limited to apparatuses and systems including a heterostructure having a first barrier layer, a gallium nitride channel layer on the first barrier layer, and a second barrier layer on the gallium nitride channel layer and including a first sublayer, a second sublayer, and a third sublayer. The first barrier layer, the first sublayer, and the third sublayer may each include aluminum. Other embodiments may be described and claimed.