Inventors:
Henry Edwards - Garland TX, US
Jeffrey Large - Dallas TX, US
John West - Plano TX, US
International Classification:
H01L021/00
Abstract:
An embodiment of the invention is a method of integrated circuit repair that includes removing the top dielectric layer in at least one location using a FIB and etching exposed areas of a top metal layer using a wet chemistry process. This method also includes etching selected portions of one or more dielectric interconnect layers using a FIB, and then using a FIB to either cut a selected portion of a metal interconnect layer or connect a selected portion of a metal interconnect layer Another embodiment of the invention is a method of integrated circuit repair that forms a top dielectric layer over the circuit and then removes the top dielectric layer in at least one location using a FIB. The exposed areas of a top metal layer are etched using a wet chemistry process. Selected portions of one or more dielectric interconnect layers are etched using a FIB, and then a FIB is used to either cut a selected portion of a metal interconnect layer or connect a selected portion of a metal interconnect layer