Inventors:
Chintamani Palsule - Fort Collins CO, US
Jay Meyer - Fort Collins CO, US
John Stanback - Fort Collins CO, US
Jeremy Theil - Mountain View CA, US
Mark Crook - Fort Collins CO, US
Kirk Lindahl - Louisville CO, US
International Classification:
H01L 21/4763
Abstract:
A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.