JAMES PATRICK CAREY
Accountancy in Boston, MA
License number
Massachusetts 19199
Issued Date
Sep 17, 1998
Expiration Date
Jun 30, 2016
Type
Certified Public Accountant
Address
Address
Boston, MA 02113
Personal information
See more information about JAMES PATRICK CAREY at radaris.comName
Address
Phone
50 Worcester St, Taunton, MA 02780
49 S Hampton Rd, Amesbury, MA 01913
577 Main St, Hyannis, MA 02601
5 Austin St, Blackstone, MA 01504
Professional information
See more information about JAMES PATRICK CAREY at trustoria.com
Postdoctoral Fellow At Umass Medical School
Postdoctoral Fellow At Umass Medical School
Position:
Postdoctoral Fellow at UMass Medical School
Location:
Greater Boston Area
Industry:
Research
Work:
UMass Medical School
since Nov 2005
-
Postdoctoral Fellow
University of Washington
Sep 1999 - Aug 2005
-
Graduate Research Assistant
Education:
University of Washington 1999 - 2005
PhD, Molecular & Cellular Biology University of Wisconsin-Parkside 1994 - 1998
B.S., Molecular Biology
PhD, Molecular & Cellular Biology University of Wisconsin-Parkside 1994 - 1998
B.S., Molecular Biology
Platinum Advisor At Omogrosso, Carey &Amp; Associates
Platinum Advisor At Omogrosso, Carey &Amp; Associates
Position:
Platinum Financial Advisor at Omogrosso, Carey & Associates, Financial Advisor at Ameriprise Financial Services, Inc., 350 Park St., Suite 205, North Reading, MA 01864
Location:
Greater Boston Area
Industry:
Financial Services
Work:
Omogrosso, Carey & Associates
- 350 Park Street, Suite 205, North Reading, MA since Sep 2001
-
Platinum Financial Advisor
Ameriprise Financial Services, Inc., 350 Park St., Suite 205, North Reading, MA 01864
since Feb 1993
-
Financial Advisor
Education:
Northeastern University 1992
Master of Business Administration (M.B.A.), Finance, General
Master of Business Administration (M.B.A.), Finance, General
Awards:
Accredited Portfolio Manager, Certified Fund Specialist, Chartered Financial Consultant
Lead Maintenance Facilities Shire Hgt
Lead Maintenance Facilities Shire Hgt
Position:
Lead Facilities mechanic at Shire Pharmaceuticals
Location:
Greater Boston Area
Industry:
Facilities Services
Work:
Shire Pharmaceuticals
since Apr 2009
-
Lead Facilities mechanic
Wyeth
2009 - 2009
-
lead facilities
Sr Lead Maintenance Mechanic At Shire Hgt
Sr Lead Maintenance Mechanic At Shire Hgt
Position:
Sr lead maintenance mechanic at Shire HGT
Location:
Greater Boston Area
Industry:
Facilities Services
Work:
Shire HGT
-
Sr lead maintenance mechanic
Senior Field Engineer At Schneider Electric
Senior Field Engineer At Schneider Electric
Position:
Senior Field Engineer at Schneider Electric
Location:
Greater Boston Area
Industry:
Mechanical or Industrial Engineering
Work:
Schneider Electric
-
Senior Field Engineer
Service Manager At Fraser Engineering Co., Inc.
Service Manager At Fraser Engineering Co., Inc.
Position:
Service Manager at Fraser Engineering Co., Inc.
Location:
Greater Boston Area
Industry:
Construction
Work:
Fraser Engineering Co., Inc.
-
Service Manager
Manufacture Of Silicon-Based Devices Having Disordered Sulfur-Doped Surface Layers
Manufacture Of Silicon-Based Devices Having Disordered Sulfur-Doped Surface Layers
US Patent:
2008004, Feb 21, 2008
Filed:
Sep 24, 2004
Appl. No.:
10/950248
Inventors:
Eric Mazur - Concord MA, US
James Carey - Brighton MA, US
James Carey - Brighton MA, US
Assignee:
PRESIDENT & FELLOWS OF HARVARD - Cambridge MA
International Classification:
H01L 21/00
US Classification:
438095000
Abstract:
The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.
Silicon-Based Visible And Near-Infrared Optoelectric Devices
Silicon-Based Visible And Near-Infrared Optoelectric Devices
US Patent:
2005012, Jun 16, 2005
Filed:
Sep 24, 2004
Appl. No.:
10/950230
Inventors:
Eric Mazur - Concord MA, US
James Carey - Brighton MA, US
James Carey - Brighton MA, US
Assignee:
PRESIDENT & FELLOWS OF HARVARD COLL - Cambridge MA
International Classification:
H01L031/109
US Classification:
257200000
Abstract:
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.