JAMES KIM, MD
Medical Practice at El Camino Real, Santa Clara, CA

2011029, Dec 8, 2011

Jun 8, 2010

12/796600

James C. Kim - Mountain View CA, US
Sungsoo Yi - Sunnyvale CA, US
Danny E. Mars - Los Altos CA, US

SUNDIODE INC. - Sunnyvale CA

G01J 3/28, H01L 27/144, H05B 37/02, H01L 31/0352, H01L 33/04, H01L 27/146, H01L 21/28

356326, 2502081, 2502082, 438478, 257 9, 315312, 977954, 977950, 257E33005, 257E31032, 257E21158

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

8431817, Apr 30, 2013

Jun 8, 2010

12/796589

James C. Kim - Mountain View CA, US
Sungsoo Yi - Sunnyvale CA, US
Danny E. Mars - Los Altos CA, US

Sundiode Inc. - Sunnyvale CA

H01L 31/00

136256, 136255, 257 81, 257231, 257746, 257748, 257774, 438 57, 438 94, 438 98, 438129, 438584, 438595, 438596, 438597, 977720, 977825, 977932, 977948, 977949, 977950

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.

2010022, Sep 9, 2010

Mar 4, 2009

12/397841

James Chinmo Kim - Mountain View CA, US

SUNDIODE INC. - Sunnyvale CA

H01L 31/00, H01L 31/0352

136255, 136256, 438 57, 257E31032

A solar cell having back side contacts and method for forming the same is disclosed. A substrate of the solar cell has a first region that is n-doped and a second region that is p-doped. A first active region is above the n-doped region and a second active region is above p-doped region. A front region connects the top of the first active region to the top of the second active region to allow charge carriers to transfer from one active region to the other active region. The solar cell has a first conductive contact on the back side of the substrate and proximate the n-doped region and a second conductive contact on the back side of the substrate and proximate the p-doped region.

2012002, Feb 2, 2012

Aug 2, 2010

12/848722

Danny E. Mars - Los Altos CA, US
James C. Kim - Mountain View CA, US
Sungsoo Yi - Sunnyvale CA, US

SUNDIODE INC. - Sunnyvale CA

H01L 29/775, H01L 21/336, H01L 29/737

257 24, 257 14, 438284, 257E29245, 257E29188, 257E21411

Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.

8476637, Jul 2, 2013

Jun 8, 2010

12/796569

James C. Kim - Mountain View CA, US
Sungsoo Yi - Sunnyvale CA, US
Danny E. Mars - Los Altos CA, US

Sundiode Inc. - Sunnyvale CA

H01L 29/10

257 66, 257 40, 257E29277, 438 9, 438152, 438155

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e. g. , nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.