JACOB MARK FABER
Pilots at 9 Ave, Beaverton, OR

License number
Oregon A4768216
Issued Date
May 2015
Expiration Date
May 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
1252 NE 9Th Ave, Beaverton, OR 97124

Personal information

See more information about JACOB MARK FABER at radaris.com
Name
Address
Phone
Jacob Faber
1252 NE 9Th Ave, Hillsboro, OR 97124
Jacob Faber
2400 SW Kanan St, Portland, OR 97239
Jacob Faber
Hillsboro, OR
(503) 681-2280
Jacob Faber
666 Westwood Dr, Portland, OR 97201
Jacob Faber
1252 9Th Ave, Hillsboro, OR 97124

Professional information

Jacob Faber Photo 1

Interlayer Interconnects And Associated Techniques And Configurations

US Patent:
2014002, Jan 30, 2014
Filed:
Jul 27, 2012
Appl. No.:
13/560930
Inventors:
Florian Gstrein - Portland OR, US
Hui Jae Yoo - Hillsboro OR, US
Jacob M. Faber - Hillsboro OR, US
James S. Clarke - Portland OR, US
International Classification:
H01L 23/522, G06F 1/16, H01L 21/768
US Classification:
36167902, 257762, 438637, 257E23145, 257E21585
Abstract:
Embodiments of the present disclosure are directed towards interlayer interconnects and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, one or more device layers disposed on the semiconductor substrate, and one or more interconnect layers disposed on the one or more device layers, the one or more interconnect layers including interconnect structures configured to route electrical signals to or from the one or more device layers, the interconnect structures comprising copper (Cu) and germanium (Ge). Other embodiments may be described and/or claimed.


Jacob Faber Photo 2

Method Of Forming Low Resistivity Tanx/Ta Diffusion Barriers For Backend Interconnects

US Patent:
2014006, Mar 6, 2014
Filed:
Dec 27, 2011
Appl. No.:
13/995170
Inventors:
Christopher Jezewski - Hillsboro OR, US
Boyan Boyanov - Portland OR, US
James J. Clarke - Portland OR, US
Jacob M. Faber - Hillsboro OR, US
International Classification:
H01L 21/768, H01L 23/532
US Classification:
257751, 438643
Abstract:
The present disclosure relates diffusion barrier layers for backend layers for interconnects and their methods of manufacturing. A TaN/Ta diffusion barrier layer used for backend interconnect is formed at a temperature between about 150-450° C. wherein the Ta film exhibits a body-centered-cubic (BCC) structure and a lower electrical resistivity. Other embodiments are described and claimed.