DR. HOANG LE, PHARM.D
Pharmacy at Creekstone Cir, San Jose, CA
License number
California 63385
Category
Pharmacy
Type
Pharmacist
Address
Address
1731 Creekstone Cir, San Jose, CA 95133
Phone
(408) 204-3678
Personal information
See more information about HOANG LE at radaris.comName
Address
Phone
5201 Buchanan St, Los Angeles, CA 90042
528 Sonoma Ct, Ontario, CA 91762
525 S 9Th St, San Jose, CA 95112
4421 Morningside Ave, Santa Ana, CA 92703
4605 Armour Dr, Santa Clara, CA 95054
Organization information
See more information about HOANG LE at bizstanding.comHoang Le Justin DDS
5651 Snell Ave, San Jose, CA 95123
Industry:
Dentist's Office
Family And General Dentistry:
Justin H. Le (Family And General Dentistry)
Dan Hoang Le Co
3010 Remington Ct, San Jose, CA 95148
Industry:
Business Services at Non-Commercial Site
Professional information
Hoang Le - San Jose, CA
Work:
CTGen, Chemistry Serving Life
Biochemist - R&D/Production Atmospheric Chemistry Research Laboratory
Research Assistant Atmospheric Chemistry Research Laboratory
Lab Assistant Biochemistry Laboratory
Biochemist
Biochemist - R&D/Production Atmospheric Chemistry Research Laboratory
Research Assistant Atmospheric Chemistry Research Laboratory
Lab Assistant Biochemistry Laboratory
Biochemist
Education:
San Jose State University - San Jose, CA
Bachelor of Science in Biochemistry
Bachelor of Science in Biochemistry
Hoang Yen Le - San Jose, CA
Work:
Atmel corporation - San Jose, CA
Quality Inspector
Quality Inspector
Narrow Semiconductor Trench Structure
US Patent:
2007004, Mar 1, 2007
Filed:
Mar 9, 2006
Appl. No.:
11/373630
Inventors:
Hoang Le - San Jose CA, US
Kuo-In Chen - Los Altos CA, US
Kuo-In Chen - Los Altos CA, US
International Classification:
H01L 21/76
US Classification:
438424000
Abstract:
Systems and methods for narrow semiconductor trench structures. In a first method embodiment, a method for forming a narrow trench comprises forming a first layer of insulating material on a substrate and creating a trench through the first layer of insulating material and into the substrate. A second insulating material is formed on the first layer and on exposed portions of the trench and the second insulating material is removed from the first layer of insulating material and the bottom of the trench. The trench is filled with an epitaxial material and the first layer of insulating material is removed. A narrow trench is formed by the removal of remaining portions of the second insulating material.
Narrow Semiconductor Trench Structure
US Patent:
2009010, Apr 23, 2009
Filed:
Feb 13, 2008
Appl. No.:
12/030809
Inventors:
Hoang Le - San Jose CA, US
Kuo-In Chen - Los Altos CA, US
Kuo-In Chen - Los Altos CA, US
Assignee:
Vishay-Siliconix - Santa Clara CA
International Classification:
H01L 21/762
US Classification:
438429, 257E21546
Abstract:
Systems and methods for narrow semiconductor trench structures. In a first method embodiment, a method for forming a narrow trench comprises forming a first layer of insulating material on a substrate and creating a trench through the first layer of insulating material and into the substrate. A second insulating material is formed on the first layer and on exposed portions of the trench and the second insulating material is removed from the first layer of insulating material and the bottom of the trench. The trench is filled with an epitaxial material and the first layer of insulating material is removed. A narrow trench is formed by the removal of remaining portions of the second insulating material.