EUGENE CHEN, P.T.
Physical Therapy at Country Dr, Fremont, CA
License number
California PT27629
Category
Restorative Service Providers
Type
Physical Therapist
Address
Address
2
2296 Country Dr, Fremont, CA 94536
37698 Aster Ct, Newark, CA 94560
37698 Aster Ct, Newark, CA 94560
Phone
(510) 797-9299
Professional information
Eugene Chen, Fremont CA - PT (Physical therapy)
Specialties:
Physical Therapy
Address:
2296 Country Dr, Fremont 94536
(510) 797-9299 (Phone)
(510) 797-9299 (Phone)
Languages:
English
Magnetic Memory Array Architecture
US Patent:
7283384, Oct 16, 2007
Filed:
Mar 24, 2004
Appl. No.:
10/809134
Inventors:
Fredrick B. Jenne - Los Gatos CA, US
Eugene Y. Chen - Fremont CA, US
Thomas M. Mnich - Woodland Park CO, US
William L. Stevenson - Redwood City CA, US
Eugene Y. Chen - Fremont CA, US
Thomas M. Mnich - Woodland Park CO, US
William L. Stevenson - Redwood City CA, US
Assignee:
Silicon Magnetic Systems - San Jose CA
International Classification:
G11C 11/00
US Classification:
365158, 365171, 365 55
Abstract:
An MRAM device is provided which includes an array of magnetic elements, a plurality of conductive lines configured to set magnetization states of the magnetic elements and circuitry configured to vary current applications along one or more of the conductive lines. In some cases, the MRAM device may additionally or alternatively include circuitry which is configured to terminate an application of current along one or more of the conductive lines before magnetization states of one or more magnetic elements selected for a write operation of the device are changed. In either case, a device is provided which includes an MRAM array and a first storage circuit comprising one or more magnetic elements, wherein the first storage circuit is configured to store parameter settings characterizing operations of the magnetic random access memory array within the magnetic elements. Methods for operating the devices provided herein are contemplated as well.
Method And System For Providing A Magnetic Memory Structure Utilizing Spin Transfer
US Patent:
7623369, Nov 24, 2009
Filed:
Feb 13, 2008
Appl. No.:
12/030541
Inventors:
Xiao Luo - Cupertino CA, US
Eugene Chen - Fremont CA, US
Lien-Chang Wang - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Eugene Chen - Fremont CA, US
Lien-Chang Wang - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Assignee:
Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo
Renesas Technology Corp. - Tokyo
International Classification:
G11C 16/04
US Classification:
365158, 365173
Abstract:
A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
Magnetic Tunneling Junction Elements Having Magnetic Substructures(S) With A Perpendicular Anisotropy And Memories Using Such Magnetic Elements
US Patent:
8546896, Oct 1, 2013
Filed:
Nov 6, 2010
Appl. No.:
12/941031
Inventors:
Daniel Lottis - Sunnyvale CA, US
Eugene Youjun Chen - Fremont CA, US
Xueti Tang - Fremont CA, US
Steven M. Watts - Mountain View CA, US
Eugene Youjun Chen - Fremont CA, US
Xueti Tang - Fremont CA, US
Steven M. Watts - Mountain View CA, US
Assignee:
Grandis, Inc. - San Jose CA
International Classification:
H01L 29/82
US Classification:
257421, 257E29323
Abstract:
A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.
Method And System For Providing A Magnetic Element And Magnetic Memory Being Unidirectional Writing Enabled
US Patent:
7800942, Sep 21, 2010
Filed:
Jun 11, 2008
Appl. No.:
12/136916
Inventors:
Eugene Chen - Fremont CA, US
Dmytro Apalkov - Milpitas CA, US
Dmytro Apalkov - Milpitas CA, US
Assignee:
Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo
Renesas Technology Corp. - Tokyo
International Classification:
G11C 11/15
US Classification:
365173, 365171, 365158
Abstract:
A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KV/kT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-Plane Equilibrium Magnetization
US Patent:
2011014, Jun 16, 2011
Filed:
Nov 3, 2010
Appl. No.:
12/938988
Inventors:
Paul P. Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US
Eugene Chen - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Eugene Chen - Fremont CA, US
Assignee:
GRANDIS, INC. - Milpitas CA
International Classification:
H01L 29/82
US Classification:
257421, 257E29323
Abstract:
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
Current Driven Switching Of Magnetic Storage Cells Utilizing Spin Transfer And Magnetic Memories Using Such Cells
US Patent:
7272035, Sep 18, 2007
Filed:
Aug 31, 2005
Appl. No.:
11/217524
Inventors:
Eugene Youjun Chen - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Yiming Huai - Pleasanton CA, US
Assignee:
Grandis, Inc. - Milpitas CA
International Classification:
G11C 11/00
US Classification:
365158, 365207, 365209, 365210
Abstract:
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.
Current Driven Memory Cells Having Enhanced Current And Enhanced Current Symmetry
US Patent:
7791931, Sep 7, 2010
Filed:
Mar 28, 2009
Appl. No.:
12/413535
Inventors:
Eugene Youjun Chen - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Yiming Huai - Pleasanton CA, US
Assignee:
Grandis, Inc. - Milpitas CA
International Classification:
G11C 11/00
US Classification:
365158
Abstract:
A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
Magnetic Device Having Multilayered Free Ferromagnetic Layer
US Patent:
7973349, Jul 5, 2011
Filed:
Aug 1, 2006
Appl. No.:
11/498294
Inventors:
Yiming Huai - Pleasanton CA, US
Zhitao Diao - Fremont CA, US
Eugene Youjun Chen - Fremont CA, US
Zhitao Diao - Fremont CA, US
Eugene Youjun Chen - Fremont CA, US
Assignee:
Grandis Inc. - Milpitas CA
International Classification:
H01L 29/94
US Classification:
257295
Abstract:
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e. g. , thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e. g. , high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
Current Driven Switching Of Magnetic Storage Cells Utilizing Spin Transfer And Magnetic Memories Using Such Cells
US Patent:
7272034, Sep 18, 2007
Filed:
Aug 31, 2005
Appl. No.:
11/217258
Inventors:
Eugene Youjun Chen - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Yiming Huai - Pleasanton CA, US
Assignee:
Grandis, Inc. - Milpitas CA
International Classification:
G11C 11/00
US Classification:
365158, 365207, 365209, 365210
Abstract:
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes at least one magnetic element and a plurality of selection transistors. The at least one magnetic element is capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element. The at least one selection transistor is configured to allow the magnetic element to be alternately selected for writing and reading. Architectures for reading and writing to the magnetic storage cells are also described.