ERICH THEILMANN SCHLECHT
Pilots at Michillinda Ave, Pasadena, CA
License number
California A2388752
Issued Date
Oct 2015
Expiration Date
Oct 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
1155 N Michillinda Ave, Pasadena, CA 91107
Professional information
High-Resolution Three-Dimensional Imaging Radar
US Patent:
2008030, Dec 11, 2008
Filed:
Jun 6, 2008
Appl. No.:
12/135040
Inventors:
Ken B. Cooper - La Canada CA, US
Goutam Chattopadhyay - Pasadena CA, US
Peter H. Siegel - La Canada CA, US
Robert J. Dengler - Diamond Bar CA, US
Erich T. Schlecht - Pasadena CA, US
Imran Mehdi - South Pasadena CA, US
Anders J. Skalare - Pasadena CA, US
Goutam Chattopadhyay - Pasadena CA, US
Peter H. Siegel - La Canada CA, US
Robert J. Dengler - Diamond Bar CA, US
Erich T. Schlecht - Pasadena CA, US
Imran Mehdi - South Pasadena CA, US
Anders J. Skalare - Pasadena CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
G01C 3/08
US Classification:
356 515
Abstract:
A three-dimensional imaging radar operating at high frequency e.g., 670 GHz, is disclosed. The active target illumination inherent in radar solves the problem of low signal power and narrow-band detection by using submillimeter heterodyne mixer receivers. A submillimeter imaging radar may use low phase-noise synthesizers and a fast chirper to generate a frequency-modulated continuous-wave (FMCW) waveform. Three-dimensional images are generated through range information derived for each pixel scanned over a target. A peak finding algorithm may be used in processing for each pixel to differentiate material layers of the target. Improved focusing is achieved through a compensation signal sampled from a point source calibration target and applied to received signals from active targets prior to FFT-based range compression to extract and display high-resolution target images. Such an imaging radar has particular application in detecting concealed weapons or contraband.
Nanotube Schottky Diodes For High-Frequency Applications
US Patent:
2008031, Dec 25, 2008
Filed:
Feb 25, 2008
Appl. No.:
12/072320
Inventors:
Harish Manohara - Arcadia CA, US
Brian Hunt - LaCrescenta CA, US
Erich Schlecht - Pasadena CA, US
Peter Siegel - LaCanada CA, US
Eric Wong - Los Angeles CA, US
Brian Hunt - LaCrescenta CA, US
Erich Schlecht - Pasadena CA, US
Peter Siegel - LaCanada CA, US
Eric Wong - Los Angeles CA, US
International Classification:
H01L 29/12, H01L 21/205
US Classification:
257 14, 438479, 257E2907, 257E21104
Abstract:
Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.
On-Chip Power-Combining For High-Power Schottky Diode Based Frequency Multipliers
US Patent:
2013022, Sep 5, 2013
Filed:
Aug 27, 2012
Appl. No.:
13/595964
Inventors:
Jose V. Siles - Pasadena CA, US
Goutam Chattopadhyay - Pasadena CA, US
Choonsup Lee - La Palma CA, US
Erich T. Schlecht - Pasadena CA, US
Cecile Jung - Pasadena CA, US
Imran Mehdi - South Pasadena CA, US
Goutam Chattopadhyay - Pasadena CA, US
Choonsup Lee - La Palma CA, US
Erich T. Schlecht - Pasadena CA, US
Cecile Jung - Pasadena CA, US
Imran Mehdi - South Pasadena CA, US
Assignee:
CALIFORNIA INSTITUTE OF TECHNOLOGY - Pasadena CA
International Classification:
H03B 19/16, H01L 21/77
US Classification:
327119, 438106
Abstract:
A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
Nanotube Schottky Diodes For High-Frequency Applications
US Patent:
2006026, Nov 23, 2006
Filed:
May 23, 2006
Appl. No.:
11/439625
Inventors:
Harish Manohara - Arcadia CA, US
Brian Hunt - LaCrescenta CA, US
Erich Schlecht - Pasadena CA, US
Peter Siegel - LaCanada CA, US
Eric Wong - Los Angeles CA, US
Brian Hunt - LaCrescenta CA, US
Erich Schlecht - Pasadena CA, US
Peter Siegel - LaCanada CA, US
Eric Wong - Los Angeles CA, US
International Classification:
H01L 21/00
US Classification:
257471000, 438092000
Abstract:
Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.
Waveguide Apparatus With Integrated Amplifier And Associated Transitions
US Patent:
2007013, Jun 14, 2007
Filed:
Dec 5, 2006
Appl. No.:
11/567143
Inventors:
Pekka Kangaslahti - Los Angeles CA, US
Erich Schlecht - Pasadena CA, US
Lorene Samoska - La Canada CA, US
Erich Schlecht - Pasadena CA, US
Lorene Samoska - La Canada CA, US
International Classification:
H01S 3/00
US Classification:
359337000
Abstract:
An waveguide apparatus and associated method are provided. Included is a waveguide and an integrated circuit positioned, at least in part, in the waveguide. The integrated circuit includes an amplifier and at least one transition between the amplifier and the waveguide.
670 Ghz Schottky Diode Based Subharmonic Mixer With Cpw Circuits And 70 Ghz If
US Patent:
2012028, Nov 8, 2012
Filed:
May 2, 2012
Appl. No.:
13/462679
Inventors:
Goutam Chattopadhyay - Pasadena CA, US
Erich T. Schlecht - Pasadena CA, US
Choonsup Lee - La Palma CA, US
Robert H. Lin - Chino CA, US
John J. Gill - La Crescenta CA, US
Seth Sin - Pasadena CA, US
Imran Mehdi - South Pasadena CA, US
Erich T. Schlecht - Pasadena CA, US
Choonsup Lee - La Palma CA, US
Robert H. Lin - Chino CA, US
John J. Gill - La Crescenta CA, US
Seth Sin - Pasadena CA, US
Imran Mehdi - South Pasadena CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
G06G 7/12, H01L 21/329
US Classification:
327355, 438478, 257E21359
Abstract:
A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.