Inventors:
Richard M. Barth - Palo Alto CA, US
Frederick A. Ware - Los Altos Hills CA, US
Donald C. Stark - Los Altos CA, US
Craig E. Hampel - San Jose CA, US
Paul G. Davis - San Jose CA, US
Abhijit M. Abhyankar - Sunnyvale CA, US
James A. Gasbarro - Mountain View CA, US
David Nguyen - San Jose CA, US
Assignee:
Rambus Inc. - Los Altos CA
International Classification:
G06F 12/00
US Classification:
711167, 711105, 711169, 365190, 365222
Abstract:
An integrated circuit memory device has a first set of pins to receive, using a clock signal, a row address followed by a column address. The device has a second set of pins to receive, using the clock signal, a sense command and a write command. The sense command specifies that the device activate a row of memory cells identified by the row address. The write command specifies that the memory device receive write data and store the write data at a location, identified by the column address, in the row of memory cells. The write command is posted internally to the memory device after a first delay has transpired from a first time period in which the write command is received at the second set of pins. The write data is received at a third set of pins after a second delay has transpired from the first time period.