LISA WEN-WEN YANG, MD
Osteopathic Medicine at Hospital Pkwy, San Jose, CA
License number
California A117334
Category
Osteopathic Medicine
Type
Emergency Medicine
Address
Address
250 Hospital Pkwy, San Jose, CA 95119
Phone
(408) 972-6140
Personal information
See more information about LISA WEN-WEN YANG at radaris.comName
Address
Phone
515 S Harvard Blvd APT 109, Los Angeles, CA 90020
4724 F Pkwy, Sacramento, CA 95823
4717 Camino Royale Dr, Sacramento, CA 95823
5465 W Holland Ave, Fresno, CA 93722
548 S Dallas Ave, San Bernardino, CA 92410
Professional information
Method Of Forming Solder Bumps On A Semiconductor Wafer
US Patent:
6426282, Jul 30, 2002
Filed:
May 4, 2000
Appl. No.:
09/565569
Inventors:
Dinesh Saigal - San Jose CA
Shankarram Athreya - Sunnyvale CA
Kenny King-Tai Ngan - Fremont CA
Lisa L. Yang - San Jose CA
Shankarram Athreya - Sunnyvale CA
Kenny King-Tai Ngan - Fremont CA
Lisa L. Yang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2144
US Classification:
438613, 438653
Abstract:
A method of forming solder bumps on a semiconductor wafer utilizing a low temperature biasable electrostatic chuck. In particular, the method comprises the steps of providing at least one bond pad on the semiconductor wafer, forming a barrier layer over the bond pad, and forming the solder bumps upon the at least one bond pad. By controlling the temperature and biasing of the electrostatic chuck, the barrier layer, such as nickel vanadium, exhibits a low tensile or compressive stress.
Plasma Treatment For Ex-Situ Contact Fill
US Patent:
6297147, Oct 2, 2001
Filed:
Jun 5, 1998
Appl. No.:
9/092811
Inventors:
Lisa Yang - San Jose CA
Anish Tolia - Santa Clara CA
Roderick Craig Mosely - Pleasanton CA
Anish Tolia - Santa Clara CA
Roderick Craig Mosely - Pleasanton CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 214763
US Classification:
438627
Abstract:
The present invention provides a method and apparatus for filling contacts, vias, trenches, and other patterns, in a substrate surface, particularly patterns having high aspect ratios. Generally, the present invention provides a method for removing oxygen from the surface of an oxidized metal layer prior to deposition of a subsequent metal. The oxidized metal is treated with a plasma consisting of nitrogen, hydrogen, or a mixture thereof. In one aspect of the invention, the metal layer is Ti, TiN, Ta, TaN, Ni, NiV, or V, and a subsequent wetting layer is deposited using either CVD techniques or electroplating, such as CVD aluminum (Al) or electroplating of copper (Cu). The metal layer can be exposed to oxygen or the atmosphere and then treated with a plasma of nitrogen and/or hydrogen in two or more cycles to remove or reduce oxidation of the surface of the metal layer and nucleate the growth of a subsequent metal layer thereon.
Sputtering Chamber Shield Promoting Reliable Plasma Ignition
US Patent:
6149784, Nov 21, 2000
Filed:
Oct 22, 1999
Appl. No.:
9/425583
Inventors:
Jingang Su - Sunnyvale CA
Nelson A. Yee - Redwood City CA
John C. Forster - San Francisco CA
Kenny King-Tai Ngan - Fremont CA
Lisa L. Yang - San Jose CA
Nelson A. Yee - Redwood City CA
John C. Forster - San Francisco CA
Kenny King-Tai Ngan - Fremont CA
Lisa L. Yang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
20429811
Abstract:
A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material such as cobalt or nickel. The grounded shield includes a slanted portion separated from the beveled periphery of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee According to one embodiment of the invention, the knee is located greater than 9 mm from the face of the target and at a radial position at least 1 mm inward of the outer periphery of the target face.