DAVID DOUGLAS TRUSSELL
Pilots at Donahue Ter, Fremont, CA
License number
California A2527916
Issued Date
Jun 2015
Expiration Date
Jun 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
34202 Donahue Ter, Fremont, CA 94555
Professional information
Chemical Vapor Deposition System With A Plasma Chamber Having Separate Process Gas And Cleaning Gas Injection Ports
US Patent:
RE38097, Apr 29, 2003
Filed:
Nov 21, 2001
Appl. No.:
09/989106
Inventors:
David Trussell - Fremont CA
C. Robert Koemtzopoulos - Hayward CA
Felix Kozakevich - Sunnyvale CA
C. Robert Koemtzopoulos - Hayward CA
Felix Kozakevich - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 9100
US Classification:
134 221, 134 11, 134 37, 134 2218, 134 31
Abstract:
A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.
Multi-Part Electrode For A Semiconductor Processing Plasma Reactor And Method Of Replacing A Portion Of A Multi-Part Electrode
US Patent:
8573153, Nov 5, 2013
Filed:
Nov 24, 2010
Appl. No.:
12/954060
Inventors:
Andreas Fischer - Castro Valley CA, US
William S. Kennedy - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
David Trussell - Fremont CA, US
William S. Kennedy - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
David Trussell - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 16/00, H01L 21/00
US Classification:
118723E, 15634543
Abstract:
An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
Chemical Vapor Deposition System With A Plasma Chamber Having Separate Process Gas And Cleaning Gas Injection Ports
US Patent:
5988187, Nov 23, 1999
Filed:
Jul 9, 1996
Appl. No.:
8/679356
Inventors:
David Trussell - Fremont CA
C. Robert Koemtzopoulos - Hayward CA
Felix Kozakevich - Sunnyvale CA
C. Robert Koemtzopoulos - Hayward CA
Felix Kozakevich - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 900, A45B 2512, A45B 2500, A45B 2514
US Classification:
134 221
Abstract:
A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.
Multi-Part Electrode For A Semiconductor Processing Plasma Reactor And Method Of Replacing A Portion Of A Multi-Part Electrode
US Patent:
7861667, Jan 4, 2011
Filed:
May 23, 2003
Appl. No.:
10/445146
Inventors:
Andreas Fischer - Castro Valley CA, US
William S. Kennedy - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
David Trussell - Fremont CA, US
William S. Kennedy - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
David Trussell - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 16/00, H01L 21/00
US Classification:
118723E, 15634543
Abstract:
An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
Plasma Processor With Electrode Responsive To Multiple Rf Frequencies
US Patent:
7169256, Jan 30, 2007
Filed:
May 28, 2004
Appl. No.:
10/855706
Inventors:
Raj Dhindsa - San Jose CA, US
Felix Kozakevich - Sunnyvale CA, US
David Douglas Trussell - Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
David Douglas Trussell - Fremont CA, US
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
H01L 21/306
US Classification:
15634547, 118723 E, 31511121
Abstract:
A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.
Method Of In-Situ Cleaning Of A Chuck Within A Plasma Chamber
US Patent:
5911833, Jun 15, 1999
Filed:
Jan 15, 1997
Appl. No.:
8/784852
Inventors:
Dean Denison - San Jose CA
William Harshbarger - San Jose CA
Anwar Husain - Pleasanton CA
C. Robert Koemtzopoulos - Hayward CA
Felix Kozakevich - Sunnyvale CA
David Trussell - Fremont CA
William Harshbarger - San Jose CA
Anwar Husain - Pleasanton CA
C. Robert Koemtzopoulos - Hayward CA
Felix Kozakevich - Sunnyvale CA
David Trussell - Fremont CA
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
B44C 122
US Classification:
134 11
Abstract:
A method for in-situ cleaning of a chuck that bears a semiconductor wafer in a semiconductor manufacturing machine maintains a processing chamber in a sealed condition with the chuck inside the chamber. A wafer bearing surface of the chuck is exposed upon determining that the chuck requires a cleaning. A cleaning gas is then injected into the chamber and RF power is applied to the chamber to create a plasma that cleans the wafer bearing surface. Since the processing chamber is maintained in a sealed condition during the in-situ cleaning of the chuck, the time required to clean the chuck and prepare the chamber for continued production runs is greatly reduced.
Plasma Confinement Rings Having Reduced Polymer Deposition Characteristics
US Patent:
8500952, Aug 6, 2013
Filed:
Aug 14, 2012
Appl. No.:
13/585570
Inventors:
Rajinder Dhindsa - San Jose CA, US
Felix Kozakevich - Sunnyvale CA, US
James H. Rogers - Milpitas CA, US
David Trussell - Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
James H. Rogers - Milpitas CA, US
David Trussell - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 16/00, C23C 16/509, H01L 21/306, H01L 21/302
US Classification:
15634537, 118723 R, 118723 I, 118723 E, 118115, 15634533, 15634543, 15634545, 15634536, 156915, 156916, 438669
Abstract:
Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
Plasma Confinement Rings Having Reduced Polymer Deposition Characteristics
US Patent:
8262922, Sep 11, 2012
Filed:
Aug 26, 2008
Appl. No.:
12/230236
Inventors:
Rajinder Dhindsa - San Jose CA, US
Felix Kozakevich - Sunnyvale CA, US
James H. Rogers - Milpitas CA, US
David Trussell - Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
James H. Rogers - Milpitas CA, US
David Trussell - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
216 67, 438710, 438714, 438905
Abstract:
Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
Plasma Confinement Ring Assemblies Having Reduced Polymer Deposition Characteristics
US Patent:
7430986, Oct 7, 2008
Filed:
Mar 18, 2005
Appl. No.:
11/083241
Inventors:
Rajinder Dhindsa - San Jose CA, US
Felix Kozakevich - Sunnyvale CA, US
James H. Rogers - Milpitas CA, US
David Trussell - Fremont CA, US
Felix Kozakevich - Sunnyvale CA, US
James H. Rogers - Milpitas CA, US
David Trussell - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/306, H01L 21/302, C23C 16/00, C23C 16/509
US Classification:
118723E, 15634533, 156914, 156915, 15634537, 15634543, 15634547, 118715, 438689
Abstract:
Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.