CHRISTOPHER JOHN KNORR
Pilots at Cherokee Trl, Los Gatos, CA
License number
California A5155158
Issued Date
Nov 2015
Expiration Date
Nov 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
17707 Cherokee Trl, Los Gatos, CA 95033
Professional information
Single Poly Bipolar Transistor And Method That Uses A Selectively Epitaxially Grown Highly-Boron-Doped Silicon Layer As A Diffusion Source For An Extrinsic Base Region
US Patent:
6699741, Mar 2, 2004
Filed:
Aug 16, 2002
Appl. No.:
10/222620
Inventors:
Alexei Sadovnikov - Sunnyvale CA
Christopher John Knorr - Los Gatos CA
Christopher John Knorr - Los Gatos CA
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
H01L 21336
US Classification:
438197, 438205, 438313, 438340, 438339, 257565, 257593, 257E21371, 257E29044, 257E29193, 257197
Abstract:
A high frequency bipolar transistor that has a silicon germanium intrinsic base region is formed in a semiconductor fabrication process that forms the extrinsic base regions after the intrinsic base region has been formed. The extrinsic base regions are epitaxially grown single crystal silicon that is doped during the growth.
Super Self-Aligned Bjt With Base Shorted Field Plate And Method Of Fabricating
US Patent:
7132344, Nov 7, 2006
Filed:
Dec 3, 2004
Appl. No.:
11/003690
Inventors:
Christopher J. Knorr - Los Gatos CA, US
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
H01L 21/331, H01L 21/8222
US Classification:
438313, 438204, 257197
Abstract:
A bipolar junction transistor (BJT) structure and fabrication method are provided in which a doped polysilicon filled trench is utilized to form both the extrinsic base contact region and a vertical field plate. A sacrificial mandrel of dielectric material is formed over regions that will become the BJT active area. This allows the polysilicon filled trench to be extended above the original semiconductor substrate surface. In this way, the base-collector and emitter-base junctions are both self-aligned to the field plate trench. The field plate is utilized to control and shape the electric field in the base-collector depletion region, allowing heavier collector well doping for the same breakdown voltage. This results in improvement in both the breakdown/Rratio and the f*BVproduct.
Rf Power Transistor Having Cascaded Cells With Phase Matching Between Cells
US Patent:
6297700, Oct 2, 2001
Filed:
Feb 18, 2000
Appl. No.:
9/507123
Inventors:
John F. Sevic - Los Gatos CA
Christopher J. Knorr - Los Gatos CA
James R. Parker - Cupertino CA
Howard D. Bartlow - Palo Alto CA
Christopher J. Knorr - Los Gatos CA
James R. Parker - Cupertino CA
Howard D. Bartlow - Palo Alto CA
Assignee:
UltraRF, Inc. - Sunnyvale CA
International Classification:
H01L 2348, H01L 2710, H01L 2976
US Classification:
330277
Abstract:
The power delivered by an RF power transistor having cascaded cells or unit elements is improved by reducing the phase imbalance between elements and thereby reducing transverse effects between cells. Phase imbalance is reduced by varying the number of transistor elements connected to interconnect areas, connecting wire bonds to an input transmission line concentrated near an outer edge in the transmission line to take advantage of surface skin effects on current, and varying the surface area of the interconnect areas to adjust input impedance and output impedance of each cell.