ANDREW JAMES CLARK
Pilots at Waverley St, Palo Alto, CA
License number
California A4633227
Issued Date
Jun 2015
Expiration Date
Jun 2020
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
2021 Waverley St, Palo Alto, CA 94301
Personal information
See more information about ANDREW JAMES CLARK at radaris.comName
Address
Phone
4905 Bel Escou Dr, San Jose, CA 95124
495 N Maple Ave APT 37, Fontana, CA 92336
5063 Gloria Ave, Encino, CA 91436
5007 Ducos Pl, San Diego, CA 92124
435 Camille Cir UNIT 15, San Jose, CA 95134
Professional information
See more information about ANDREW JAMES CLARK at trustoria.com
Multilayer Rare Earth Device
Multilayer Rare Earth Device
US Patent:
2012025, Oct 11, 2012
Filed:
Sep 30, 2011
Appl. No.:
13/251086
Inventors:
Andrew Clark - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Assignee:
Translucent, Inc. - Palo Alto CA
International Classification:
H01L 29/12
US Classification:
257190, 257E29068
Abstract:
Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
Solar Cells With Engineered Spectral Conversion
Solar Cells With Engineered Spectral Conversion
US Patent:
8637763, Jan 28, 2014
Filed:
May 26, 2010
Appl. No.:
12/788285
Inventors:
Michael Lebby - Apache Junction AZ, US
Andrew Clark - Palo Alto CA, US
Andrew Clark - Palo Alto CA, US
Assignee:
Translucent, Inc. - Palo Alto CA
International Classification:
H01L 31/00, C01B 33/02
US Classification:
136256, 136247
Abstract:
A solar cell with engineered spectral conversion elements or components includes a single crystal silicon solar cell having a back surface. At least one spectral conversion element is formed on the back surface. The conversion element includes single crystal rare earth oxide, and the single crystal rare earth oxide is crystal lattice matched to the back surface of the silicon solar cell. Material including silicon is formed on the back surface in a surrounding and embedding relationship to the at least one spectral conversion element. A back reflector is positioned on the material formed on the back surface so as to reflect light passing through the silicon formed on the back surface.
Multijunction Rare Earth Solar Cell
Multijunction Rare Earth Solar Cell
US Patent:
8049100, Nov 1, 2011
Filed:
Nov 16, 2009
Appl. No.:
12/619621
Inventors:
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Richard Sewell - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Richard Sewell - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Assignee:
Translucent, Inc. - Palo Alto CA
International Classification:
H01L 31/055, H01L 31/028
US Classification:
136257, 136261
Abstract:
Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
High Efficiency Solar Cell Using Iiib Material Transition Layers
High Efficiency Solar Cell Using Iiib Material Transition Layers
US Patent:
8455756, Jun 4, 2013
Filed:
Feb 19, 2010
Appl. No.:
12/708969
Inventors:
Michael Lebby - Apache Junction AZ, US
Andrew Clark - Palo Alto CA, US
Andrew Clark - Palo Alto CA, US
Assignee:
Translucent, Inc. - Palo Alto CA
International Classification:
H01L 31/00
US Classification:
136261, 136262, 136264
Abstract:
A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the base and the layer of second material with the one surface lattice matched to the base and the opposed surface lattice matched to the layer of second material.
Photovoltaic Conversion Using Rare Earths Plus Group Iv Sensitizers
Photovoltaic Conversion Using Rare Earths Plus Group Iv Sensitizers
US Patent:
2012007, Mar 29, 2012
Filed:
Sep 24, 2010
Appl. No.:
12/890537
Inventors:
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
International Classification:
H01L 31/0232
US Classification:
136257
Abstract:
The invention relates to photovoltaic device structures of more than one layer comprising rare earth compounds and Group IV materials enabling spectral harvesting outside the conventional absorption limits for silicon.
Passive Rare Earth Tandem Solar Cell
Passive Rare Earth Tandem Solar Cell
US Patent:
8039737, Oct 18, 2011
Filed:
Nov 16, 2009
Appl. No.:
12/619549
Inventors:
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Richard Sewell - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Richard Sewell - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Assignee:
Translucent, Inc. - Palo Alto CA
International Classification:
H01L 31/055, H01L 31/028
US Classification:
136257, 136261
Abstract:
The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
Active Rare Earth Tandem Solar Cell
Active Rare Earth Tandem Solar Cell
US Patent:
8039738, Oct 18, 2011
Filed:
Nov 16, 2009
Appl. No.:
12/619637
Inventors:
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Richard Sewell - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Richard Sewell - Palo Alto CA, US
Scott Semans - Palo Alto CA, US
F. Erdem Arkun - Palo Alto CA, US
Michael Lebby - Palo Alto CA, US
Assignee:
Translucent, Inc. - Palo Alto CA
International Classification:
H01L 31/055, H01L 31/028
US Classification:
136257, 136261
Abstract:
The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
Laser Cooling Of Modified Soi Wafer
Laser Cooling Of Modified Soi Wafer
US Patent:
2012014, Jun 14, 2012
Filed:
Dec 13, 2010
Appl. No.:
12/966394
Inventors:
David L. Williams - Menlo Park CA, US
Andrew Clark - Palo Alto CA, US
Michael Lebby - Apache Junction AZ, US
Andrew Clark - Palo Alto CA, US
Michael Lebby - Apache Junction AZ, US
International Classification:
H01S 3/30, H01L 21/30
US Classification:
372 3, 438 31, 257E21211
Abstract:
A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
Reo-Ge Multi-Junction Solar Cell
Reo-Ge Multi-Junction Solar Cell
US Patent:
2012009, Apr 19, 2012
Filed:
Feb 3, 2011
Appl. No.:
13/020766
Inventors:
MICHAEL S. LEBBY - Palo Alto CA, US
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Assignee:
TRANSLUCENT, INC. - Palo Alto CA
International Classification:
H01L 31/0352
US Classification:
136255
Abstract:
The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.
Reo-Ge Multi-Junction Solar Cell
Reo-Ge Multi-Junction Solar Cell
US Patent:
2012008, Apr 12, 2012
Filed:
Dec 23, 2011
Appl. No.:
13/336664
Inventors:
Michael S. Lebby - Palo Alto CA, US
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Andrew Clark - Palo Alto CA, US
Robin Smith - Palo Alto CA, US
Assignee:
TRANSLUCENT, INC. - Palo Alto CA
International Classification:
H01L 31/0352
US Classification:
136255
Abstract:
The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.