ZVI BEN-AHARON
Broker in Framingham, MA
License number
Massachusetts 9031126
Issued Date
Jun 11, 1999
Expiration Date
Feb 5, 2018
Type
Salesperson
Address
Address
Framingham, MA 01702
Professional information
High Frequency Energy Source
US Patent:
4602221, Jul 22, 1986
Filed:
Dec 24, 1984
Appl. No.:
6/685430
Inventors:
Robert J. Regan - Needham MA
Scott J. Butler - Auburn MA
Zvi Ben-Aharon - Framingham MA
Scott J. Butler - Auburn MA
Zvi Ben-Aharon - Framingham MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H03B 500
US Classification:
331117R
Abstract:
Energy source of a low power high frequency oscillator section driving a high power high gain amplifier section. The amplifier section includes one or more SIT's. The dc operating potential is applied to the drain electrode of one of the SIT's and is supplied to the other through a dc path from the source electrode of the one SIT to the drain electrode of the other. Operating potential from the dc biasing network between the source and gate electrode of an SIT in the amplifier section is conducted through a dc path to a transistor in the oscillator section to provide operating power for the oscillator section. The oscillator output is connected through a high frequency coupling dc blocking path to the amplifier input to provide a drive signal to be amplified and extracted at the amplifier output.
High Frequency Power Source
US Patent:
4591809, May 27, 1986
Filed:
Dec 24, 1984
Appl. No.:
6/685429
Inventors:
Robert J. Regan - Needham MA
Scott J. Butler - Auburn MA
Zvi Ben-Aharon - Framingham MA
Scott J. Butler - Auburn MA
Zvi Ben-Aharon - Framingham MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H03B 500, H03F 304
US Classification:
331117R
Abstract:
A power source consisting of a low power high frequency oscillator section driving a high power high gain amplifier section. The amplifier section includes one or more SIT's. The dc operating potential is applied to the drain electrode of one of the SIT's and is supplied to the other through a dc path from the source electrode of the one SIT to the drain electrode of the other. Operating potential from the dc biasing network between the gate and source electrodes of an SIT in the amplifier section is conducted through a dc path to a transistor in the oscillator section to provide operating power for the oscillator section. The oscillator output is connected through a high frequency coupling dc blocking path to the amplifier input to provide a drive signal to be amplified and extracted at the amplifier output.