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Professional information
Ingan-Based Double Heterostructure Field Effect Transistor And Method Of Forming The Same
US Patent:
2013020, Aug 15, 2013
Filed:
Jan 18, 2013
Appl. No.:
13/745046
Inventors:
Kopin Corporation - , US
Yu Cao - Norwood MA, US
Wayne Johnson - Easton MA, US
Yu Cao - Norwood MA, US
Wayne Johnson - Easton MA, US
Assignee:
KOPIN CORPORATION - Taunton MA
International Classification:
H01L 29/15, H01L 21/02, H01L 29/205
US Classification:
257 20, 257 76, 438478
Abstract:
A double heterojunction field effect transistor (DHFET) includes a substrate, a buffer layer consisting of GaN back-barrier buffer layer formed on the substrate, a channel layer consisting of an InGaN ternary alloy in one embodiment, and in another embodiment, InGaN/GaN superlattice (SL) formed on the GaN back-barrier buffer layer opposite to the substrate. A GaN spacer layer is formed on the InGaN or InGaN/GaN superlattice channel layer opposite to the GaN buffer layer and a carrier-supplying layer consisting of an AlInN ternary alloy is formed on the GaN spacer layer opposite to the channel layer. A preferred thickness of the GaN spacer layer is less than about 1.5 nm. The InGaN/GaN SL preferably includes 1 to 5 InGaN—GaN pairs and a preferred thickness of the InGaN layer in the InGaN/GaN SL is equal to or less than about 0.5 nm. A two-dimensional electron gas is formed at the interface between the InGaN or InGaN/GaN SL channel and GaN spacer layers.