YI ZHENG
Pilots at Nieman Blvd, San Jose, CA

6815373, Nov 9, 2004

Apr 16, 2002

10/124655

Vinita Singh - Mountain View CA
Srinivas D. Nemani - San Jose CA
Yi Zheng - San Jose CA
Lihua Li - San Jose CA
Li-Qun Xia - Santa Clara CA
Ellie Yieh - San Jose CA

Applied Materials Inc. - Santa Clara CA

H01L 2131

438787, 438788, 438789, 438790

A method for depositing a low dielectric constant film having a dielectric constant of about 3. 5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

7541297, Jun 2, 2009

Oct 22, 2007

11/876541

Abhijit Basu Mallick - Palo Alto CA, US
Jeffrey C. Munro - Houston TX, US
Linlin Wang - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Yi Zheng - San Jose CA, US
Zheng Yuan - Fremont CA, US
Dimitry Lubomirsky - Cupertino CA, US
Ellie Y. Yieh - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/469, H01L 21/31

438778, 438758, 438770, 438773, 438787, 257E21279, 257E21576

A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

2003021, Nov 13, 2003

Apr 8, 2003

10/409887

Lihua Li - San Jose CA, US
Wen Zhu - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Ellie Yieh - San Jose CA, US
Son Nguyen - Los Gatos CA, US
Lester D'Cruz - San Jose CA, US
Troy Kim - Mountain View CA, US
Dian Sugiarto - Sunnyvale CA, US
Peter Lee - San Jose CA, US
Hichem M'Saad - Santa Clara CA, US
Melissa Tam - Fremont CA, US
Yi Zheng - San Jose CA, US
Srinivas Nemani - Sunnyvale CA, US

Applied Materials, Inc.

B05D005/12, C23C016/00, B05D003/00

427/255280, 427/551000, 427/058000

A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.

7939422, May 10, 2011

Nov 29, 2007

11/947674

Nitin K. Ingle - Santa Clara CA, US
Jing Tang - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Zheng Yuan - Fremont CA, US
Zhenbin Ge - San Jose CA, US
Xinliang Lu - Fremont CA, US
Vikash Banthia - Mountain View CA, US
William H. McClintock - Los Altos CA, US
Mei Chang - Saratoga CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/76

438435, 438222, 438218, 438221, 438429, 438413, 257301, 257306

A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

6890850, May 10, 2005

Jul 15, 2002

10/196498

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L021/4763, H01L021/31, H01L021/469

438631, 438634, 438638, 438789

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

7060330, Jun 13, 2006

Nov 22, 2002

10/302393

Yi Zheng - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Eric Hollar - Cupertino CA, US
Kang Sub Yim - Mountain View CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/56

427551, 427596, 4272556, 4272491

The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2. 5 and a hardness greater than 0. 5 GPa.

2004023, Nov 25, 2004

Jun 23, 2004

10/875668

Vinita Singh - Mountain View CA, US
Srinivas Nemani - San Jose CA, US
Yi Zheng - San Jose CA, US
Lihua Li - San Jose CA, US
Li-Qun Xia - Santa Clara CA, US
Ellie Yieh - San Jose CA, US

H01L021/469

427/255280

A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

2008009, May 1, 2008

Oct 22, 2007

11/876668

Francimar Schmitt - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Kang Yim - Santa Clara CA, US
Sang Ahn - Foster City CA, US
Lester D'Cruz - San Jose CA, US
Dustin Ho - Fremont CA, US
Alexandros Demos - Fremont CA, US
Li-Qun Xia - Santa Clara CA, US
Derek Witty - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US

APPLIED MATERIALS, INC. A Delaware corporation - Santa Clara CA

H01L 23/538, B32B 3/00

257751000, 428315500, 257E23173

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

7611996, Nov 3, 2009

Mar 21, 2005

11/085416

Francimar Schmitt - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Kang Sub Yim - Santa Clara CA, US
Sang H. Ahn - Foster City CA, US
Lester A. D'Cruz - San Jose CA, US
Dustin W. Ho - Fremont CA, US
Alexandros T. Demos - Fremont CA, US
Li-Qun Xia - Santa Clara CA, US
Derek R. Witty - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/469, H01L 21/31

438759

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

6902629, Jun 7, 2005

Apr 12, 2002

10/122481

Yi Zheng - San Jose CA, US
Vinita Singh - Mountain View CA, US
Srinivas D. Nemani - San Jose CA, US
Chen-An Chen - Milpitas CA, US
Shankar Venkataraman - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

B08B005/00

134 31, 134 11, 134 221, 134 2218, 134 26, 134 30, 134902, 216 63, 216 67, 216 68, 438905

Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.