XU LI
Pilots at Greenlee Dr, San Jose, CA
License number
California A5297253
Issued Date
Mar 2016
Expiration Date
Mar 2021
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
3581 Greenlee Dr APT 133, San Jose, CA 95117
Organization information
See more information about XU LI at bizstanding.comXu Li MD,PHD
5755 Cottle Rd, San Jose, CA 95123
Industry:
Genetic Medicine
Phone:
(408) 972-3326 (Phone)
Xu Li
Professional information
Dr. Xu Li, San Jose CA - MD (Doctor of Medicine)
Specialties:
Clinical Cytogenetics, Clinical Molecular Genetics
Address:
5755 Cottle Rd STE 6, San Jose 95123
(408) 972-3326 (Phone), (408) 972-3328 (Fax)
(408) 972-3326 (Phone), (408) 972-3328 (Fax)
Certifications:
Clinical Cytogenetics, 1996, Clinical Molecular Genetics, 2009
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
Sun Yet-Sen U Med Sci
U Nebr Med Ctr
Affil Hosp-Sun Yet-Sen U
Stanford Hospital
The Nebraska Medical Center
Sun Yet-Sen U Med Sci
U Nebr Med Ctr
Affil Hosp-Sun Yet-Sen U
Stanford Hospital
The Nebraska Medical Center
Xu Li, San Jose CA
Work:
Kaiser Permanente San Jose Medical Center
5755 Cottle Rd, San Jose, CA 95123
5755 Cottle Rd, San Jose, CA 95123
Cleaning Solution And Method For Cleaning Semiconductor Substrates After Polishing Of Cooper Film
US Patent:
6303551, Oct 16, 2001
Filed:
May 9, 2000
Appl. No.:
9/568793
Inventors:
Xu Li - San Jose CA
Yuexing Zhao - San Jose CA
Diane J. Hymes - San Jose CA
John M. de Larios - Palo Alto CA
Yuexing Zhao - San Jose CA
Diane J. Hymes - San Jose CA
John M. de Larios - Palo Alto CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 500
US Classification:
510175
Abstract:
A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0. 18% by weight to about 0. 22% by weight and the amount of ammonia is in a range from about 0. 0225% by weight to about 0. 0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
Cleaning Solution And Method For Cleaning Semiconductor Substrates After Polishing Of Copper Film
US Patent:
2002007, Jun 20, 2002
Filed:
Aug 31, 2001
Appl. No.:
09/945110
Inventors:
Xu Li - San Jose CA, US
Yuexing Zhao - San Jose CA, US
Diane Hymes - San Jose CA, US
John de Larios - Palo Alto CA, US
Yuexing Zhao - San Jose CA, US
Diane Hymes - San Jose CA, US
John de Larios - Palo Alto CA, US
International Classification:
C11D001/00
US Classification:
510/175000, 510/178000
Abstract:
A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.