Inventors:
Xu Li - San Jose CA, US
Yuexing Zhao - San Jose CA, US
Diane Hymes - San Jose CA, US
John de Larios - Palo Alto CA, US
International Classification:
C11D001/00
Abstract:
A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.