DR. XIAOGUANG SUN, MD
Osteopathic Medicine at Beam Ave, Saint Paul, MN

License number
Minnesota 50458
Category
Osteopathic Medicine
Type
Internal Medicine
Address
Address 2
1575 Beam Ave, Saint Paul, MN 55109
17733 76Th Ave N, Hassan, MN 55311
Phone
(763) 244-9910

Personal information

See more information about XIAOGUANG SUN at radaris.com
Name
Address
Phone
Xiaoguang Sun, age 52
11079 James Curv, Saint Paul, MN 55129
(651) 714-9601
Xiaoguang Sun, age 52
11079 James Curv, Woodbury, MN 55129
(651) 714-9601
Xiaoguang Sun
Minneapolis, MN
(651) 714-9601
Xiaoguang Sun, age 52
952 Moonlight Dr, Woodbury, MN 55125
(651) 714-9601

Organization information

See more information about XIAOGUANG SUN at bizstanding.com

Health East - Xiaoguang Sun MD

1575 Beam Ave, Maplewood, MN 55109

Categories:
Emergency & Critical Care Physicians & Surgeons
Phone:
(651) 232-7000 (Phone)

Professional information

See more information about XIAOGUANG SUN at trustoria.com
Xiaoguang Sun Photo 1
Ii-Vi/Iii-V Layered Construction On Inp Substrate

Ii-Vi/Iii-V Layered Construction On Inp Substrate

US Patent:
7126160, Oct 24, 2006
Filed:
Jun 18, 2004
Appl. No.:
10/871424
Inventors:
Xiaoguang Sun - Woodbury MN, US
Thomas J. Miller - Woodbury MN, US
Michael A. Haase - Saint Paul MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01L 33/00
US Classification:
257 98, 257 13
Abstract:
A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdZnSe where x is between 0. 44 and 0. 54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InAlAs where y is between 0. 44 and 0. 52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials.


Xiaoguang Sun Photo 2
Wet Etching Agent For Ii-Vi Semiconductors And Method

Wet Etching Agent For Ii-Vi Semiconductors And Method

US Patent:
8324112, Dec 4, 2012
Filed:
Nov 15, 2010
Appl. No.:
12/945985
Inventors:
Guoping Mao - Woodbury MN, US
Michael W. Bench - Eagan MN, US
Xiaoguang Sun - Woodbury MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01L 21/302, H01L 21/461
US Classification:
438745, 257E21485
Abstract:
A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.


Xiaoguang Sun Photo 3
Xiaoguang Sun, Monticello MN

Xiaoguang Sun, Monticello MN

Specialties:
Internal Medicine, Family Medicine
Work:
Buffalo Clinic
1001 Hart Blvd, Monticello, MN 55362 Healtheast St John's Hospital
1575 Beam Ave, Saint Paul, MN 55109 Buffalo Clinic
1700 Highway 25 N, Buffalo, MN 55313 Buffalo Clinic
11091 Jason Ave NE, Albertville, MN 55301
Education:
Beijing School Of Medicine (1994)


Xiaoguang Sun Photo 4
Ii-Vi Mqw Vsel On A Heat Sink Optically Pumped By A Gan Ld

Ii-Vi Mqw Vsel On A Heat Sink Optically Pumped By A Gan Ld

US Patent:
8488641, Jul 16, 2013
Filed:
Aug 18, 2009
Appl. No.:
13/060554
Inventors:
Michael A. Haase - St. Paul MN, US
Thomas J. Miller - Woodbury MN, US
Xiaoguang Sun - Woodbury MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01S 3/14, H01S 5/00
US Classification:
372 39, 372 4301
Abstract:
Light sources are disclosed. A disclosed light source includes a III-V based pump light source () that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light () emitted by the pump light source () to at least a partially coherent light at a second wavelength (). The VCSEL includes first and second mirrors () that form an optical cavity for light at the second wavelength. The first mirror () is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror () is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack () that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light.


Xiaoguang Sun Photo 5
Re-Emitting Semiconductor Carrier Devices For Use With Leds And Methods Of Manufacture

Re-Emitting Semiconductor Carrier Devices For Use With Leds And Methods Of Manufacture

US Patent:
2012009, Apr 26, 2012
Filed:
May 3, 2010
Appl. No.:
13/264487
Inventors:
Terry L. Smith - Roseville MN, US
Catherine A. Leatherdale - Woodbury MN, US
Michael A. Haase - St. Paul MN, US
Thomas J. Miller - Woodbury MN, US
Xiaoguang Sun - Woodbury MN, US
Zhaohui Yang - North Oaks MN, US
Todd A. Ballen - St. Paul MN, US
Amy S. Barnes - St. Paul MN, US
Assignee:
3M INNOVATIVE PROPERTIES COMPANY - Saint Paul MN
International Classification:
H01L 33/60, H01L 33/48
US Classification:
257 84, 438 25, 257E33072, 257E33076
Abstract:
Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λto visible light at a second wavelength λ, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.


Xiaoguang Sun Photo 6
Multicolored Light Converting Led With Minimal Absorption

Multicolored Light Converting Led With Minimal Absorption

US Patent:
2013007, Mar 28, 2013
Filed:
May 31, 2011
Appl. No.:
13/701145
Inventors:
Michael A. Haase - St. Paul MN, US
Junqing Xie - Woodbury MN, US
Thomas J. Miller - Woodbury MN, US
Xiaoguang Sun - Woodbury MN, US
Assignee:
3M INNOVATIVE PROPERTIES COMPANY - ST. PAUL MN
International Classification:
H01L 33/08
US Classification:
257 98
Abstract:
Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed


Xiaoguang Sun Photo 7
Adapting Short-Wavelength Led's For Polychromatic, Broadband, Or “White” Emission

Adapting Short-Wavelength Led's For Polychromatic, Broadband, Or “White” Emission

US Patent:
7700938, Apr 20, 2010
Filed:
Jul 14, 2008
Appl. No.:
12/172549
Inventors:
Thomas J. Miller - Woodbury MN, US
Michael A. Haase - Saint Paul MN, US
Terry L. Smith - Roseville MN, US
Xiaoguang Sun - Woodbury MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01L 29/06
US Classification:
257 13, 257 89
Abstract:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.


Xiaoguang Sun Photo 8
Light Converting And Emitting Device With Suppressed Dark-Line Defects

Light Converting And Emitting Device With Suppressed Dark-Line Defects

US Patent:
2013006, Mar 21, 2013
Filed:
May 31, 2011
Appl. No.:
13/698384
Inventors:
Michael A. Haase - St. Paul MN, US
Thomas J. Miller - Woodbury MN, US
Terry L. Smith - Roseville MN, US
Xiaoguang Sun - Woodbury MN, US
Junqing Xie - Woodbury MN, US
Assignee:
3M INNOVATIVE PROPERTIES COMPANY - ST. PAUL MN
International Classification:
H01L 33/50
US Classification:
257 13
Abstract:
Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.


Xiaoguang Sun Photo 9
Down-Converted Light Source With Uniform Wavelength Emission

Down-Converted Light Source With Uniform Wavelength Emission

US Patent:
8338838, Dec 25, 2012
Filed:
Dec 9, 2008
Appl. No.:
12/810052
Inventors:
Xiaoguang Sun - Woodbury MN, US
Michael A. Haase - St. Paul MN, US
Thomas J. Miller - Woodbury MN, US
Terry L. Smith - Roseville MN, US
Tommie W. Kelley - Shoreview MN, US
Catherine A. Leatherdale - Woodbury MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01L 33/00
US Classification:
257 88, 257 76, 257 98, 257E33005, 257E33067
Abstract:
An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.


Xiaoguang Sun Photo 10
Adapting Short-Wavelength Led's For Polychromatic, Broadband, Or “White” Emission

Adapting Short-Wavelength Led's For Polychromatic, Broadband, Or “White” Emission

US Patent:
7402831, Jul 22, 2008
Filed:
Dec 9, 2004
Appl. No.:
11/009217
Inventors:
Thomas J. Miller - Woodbury MN, US
Michael A. Haase - Saint Paul MN, US
Terry L. Smith - Roseville MN, US
Xiaoguang Sun - Woodbury MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01L 29/06
US Classification:
257 13, 257 89
Abstract:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.