Inventors:
William S. Brennan - Austin TX
Willie Rivera - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
B08B 700
US Classification:
134 19, 134 13, 134 31, 438905, 156345, 313553, 417 51
Abstract:
Methods of removing gaseous phase contaminants from a processing chamber, such as a PVD chamber, are provided. In one aspect, a method of removing gaseous phase water from a processing chamber is provided that includes placing a heated substrate that has a titanium film in the processing chamber to dissociate a first portion of the gaseous phase water into hydrogen and oxygen and capture some of the oxygen in, the titanium film. The dissociated hydrogen and uncaptured oxygen are pumped from the processing chamber and the substrate is removed from the processing chamber. Pump down times and test wafer consumption may be reduced.