MR. WILLIAM WAH WONG, PHARM, D
Pharmacy at Eastshore Hwy, Berkeley, CA
License number
California 60837
Category
Pharmacy
Type
Pharmacist
Address
Address
2
1057 Eastshore Hwy, Berkeley, CA 94710
PO Box 2631, Daly City, CA 94017
PO Box 2631, Daly City, CA 94017
Phone
(510) 982-0513
(626) 372-1070
(626) 372-1070
Professional information
William Wong - San Francisco Bay Area, CA
Work:
Bank of New York Mellon - San Francisco, CA
Client Services Manager Fund Account Manager Senior Fund Accountant Alameda, CA - State Street, California, US
Performance Analyst Senior Portfolio Accountant to Auditor
Client Services Manager Fund Account Manager Senior Fund Accountant Alameda, CA - State Street, California, US
Performance Analyst Senior Portfolio Accountant to Auditor
Education:
University of California - Berkeley, CA
B.S. in Environmental Economics & Policy
B.S. in Environmental Economics & Policy
Structure And Method For Fabricating Gan Substrates From Trench Patterned Gan Layers On Sapphire Substrates
US Patent:
6617261, Sep 9, 2003
Filed:
Dec 18, 2001
Appl. No.:
10/017599
Inventors:
William S. Wong - Berkeley CA
David K. Biegelsen - Portola Valley CA
Michael A. Kneissl - Mountain View CA
David K. Biegelsen - Portola Valley CA
Michael A. Kneissl - Mountain View CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
H01L 2348
US Classification:
438778
Abstract:
Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.
Method Of Forming A Low Temperature Metal Bond For Use In The Transfer Of Bulk And Thin Film Materials
US Patent:
6335263, Jan 1, 2002
Filed:
Mar 22, 2000
Appl. No.:
09/535658
Inventors:
Nathan W. Cheung - Albany CA
Timothy David Sands - Moraga CA
William S. Wong - Berkeley CA
Timothy David Sands - Moraga CA
William S. Wong - Berkeley CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 2130
US Classification:
438455, 438458, 438604
Abstract:
A method of forming a low temperature metal bond includes the step of providing a donor substrate, such as a crystallographically oriented donor substrate, including a sapphire donor substrate or a MgO donors substrate. The donor substrate may also be quartz or fused silica. A thin film is grown on a surface of the donor substrate. The thin film may be an oxide, nitride or Perovskite. The invention may be implemented using nitride thin films, including AlN, GaN, InN, and all of their solid solutions, alloys, and multi-layers. An acceptor substrate is then produced. The acceptor substrate may be Si, GaAs, polymers, such as polyimide, or stainless steel for use in microrobotics. A multi-layer metal bond interface for positioning between the thin film and the acceptor substrate is then selected. The multi-layer metal bond interface must satisfy a set of criteria, such as low temperature bonding, low resistance to shear stress, capability to adhere to the donor and acceptor substrates, and the ability to form a thin new bonded layer. A bonded layer is then formed, at a temperature below approximately 200° C.
Structure And Method For Separation And Transfer Of Semiconductor Thin Films Onto Dissimilar Substrate Materials
US Patent:
6562648, May 13, 2003
Filed:
Aug 23, 2000
Appl. No.:
09/648187
Inventors:
William S. Wong - Berkeley CA
Michael A. Kneissl - Mountain View CA
Michael A. Kneissl - Mountain View CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
H01L 2100
US Classification:
438 46, 438 33, 438455, 438458, 438460, 438464, 438977
Abstract:
A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.
Separation Of Thin Films From Transparent Substrates By Selective Optical Processing
US Patent:
6420242, Jul 16, 2002
Filed:
Jan 6, 2000
Appl. No.:
09/478915
Inventors:
Nathan W. Cheung - Albany CA
Timothy D. Sands - Moraga CA
William S. Wong - Berkeley CA
Timothy D. Sands - Moraga CA
William S. Wong - Berkeley CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 21302
US Classification:
438458
Abstract:
A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but the GaN is strongly absorbing, e. g. , 248 nm. After the laser irradiation, the sample is heated above the melting point of gallium, i. e. , above 30° C. , and the acceptor substrate and attached GaN thin film are removed from the sapphire growth substrate. If the acceptor substrate is flexible, the GaN thin film can be scribed along cleavage planes of the GaN, and, when the flexible substrate is bent, the GaN film cleaves on those planes. Thereby, GaN lasers and other electronic and opto-electronic devices can be formed.
Apparatus For Printing Etch Masks Using Phase-Change Materials
US Patent:
6742884, Jun 1, 2004
Filed:
Apr 19, 2001
Appl. No.:
09/838685
Inventors:
William S. Wong - Berkeley CA
Robert A. Street - Palo Alto CA
Stephen D. White - Santa Clara CA
Robert Matusiak - Sunnyvale CA
Raj B. Apte - Palo Alto CA
Robert A. Street - Palo Alto CA
Stephen D. White - Santa Clara CA
Robert Matusiak - Sunnyvale CA
Raj B. Apte - Palo Alto CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
E03F 100
US Classification:
347 99, 347 46, 347 2, 347 14, 347 16, 347 17, 347 18, 430 5
Abstract:
A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.
Structure And Method For Separation And Transfer Of Semiconductor Thin Films Onto Dissimilar Substrate Materials
US Patent:
6627921, Sep 30, 2003
Filed:
Dec 16, 2002
Appl. No.:
10/320823
Inventors:
William S. Wong - Berkeley CA
Michael A. Kneissl - Mountain View CA
Michael A. Kneissl - Mountain View CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
H01L 2715
US Classification:
257 79, 372 43
Abstract:
A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.
Separation Of Thin Films From Transparent Substrates By Selective Optical Processing
US Patent:
6071795, Jun 6, 2000
Filed:
Jan 23, 1998
Appl. No.:
9/012829
Inventors:
Nathan W. Cheung - Albany CA
Timothy D. Sands - Moraga CA
William S. Wong - Berkeley CA
Timothy D. Sands - Moraga CA
William S. Wong - Berkeley CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 21302
US Classification:
438458
Abstract:
A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but the GaN is strongly absorbing, e. g. , 248 nm. After the laser irradiation, the sample is heated above the melting point of gallium, i. e. , above 30. degree. C. , and the acceptor substrate and attached GaN thin film are removed from the sapphire growth substrate. If the acceptor substrate is flexible, the GaN thin film can be scribed along cleavage planes of the GaN, and, when the flexible substrate is bent, the GaN film cleaves on those planes. Thereby, GaN lasers and other electronic and opto-electronic devices can be formed.
Method For Printing Etch Masks Using Phase-Change Materials
US Patent:
6872320, Mar 29, 2005
Filed:
Apr 19, 2001
Appl. No.:
09/838684
Inventors:
William S. Wong - Berkeley CA, US
Robert A. Street - Palo Alto CA, US
Stephen D. White - Santa Clara CA, US
Robert Matusiak - Sunnyvale CA, US
Raj B. Apte - Palo Alto CA, US
Robert A. Street - Palo Alto CA, US
Stephen D. White - Santa Clara CA, US
Robert Matusiak - Sunnyvale CA, US
Raj B. Apte - Palo Alto CA, US
Assignee:
Xerox Corporation - Stamford CT
International Classification:
B44C001/22
US Classification:
216 13, 216 41, 216 42, 216 44
Abstract:
A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.