WILLIAM DALE JONES
Engineers in Phoenix, AZ

6431112, Aug 13, 2002

May 4, 2000

09/565606

Edward L. Sill - San Diego CA
William D. Jones - Phoenix AZ
Craig T. Baldwin - Chandler AZ

Tokyo Electron Limited - Tokyo

C23C 16509

118723E, 118723 R, 361234

A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma, a substrate support within the chamber, and a plurality of electrodes coupled to the substrate support. The electrodes are each positioned proximate the supporting surface and are electrically isolated from one another. An RF power source is coupled to each of the electrodes for biasing the electrodes, so that they are operable for creating a DC bias on a substrate positioned on the supporting surface. A first electrically capacitive structure is electrically coupled between the RF power source and at least one of the plurality of electrodes. The first electrically capacitive structure has a variable capacitance for varying the DC bias created on the substrate by the at least one electrode relative to the DC bias created on the substrate by at least one of the other electrodes of the plurality of electrodes. The varied DC bias thereby varies the effect of a plasma on one portion of the substrate relative to the effect of the plasma on another portion of the substrate.

2004001, Jan 29, 2004

Jan 24, 2003

10/351214

Ronald Bertram - Gilbert AZ, US
William Jones - Phoenix AZ, US
Douglas Scott - Gilbert AZ, US

B08B003/00

134/026000, 134/030000, 134/036000, 134/095100, 134/103100, 134/108000, 134/111000

A method and system for reliably reducing the formation of particles upon wafers or substrates during wafer processes is disclosed. The method and system reduces residue contamination of a substrate material during wafer processes by pre-filling a pressure chamber to a first pressure Pwith a purified pre-fill prior to filling the pressure chamber with a primary bulk source at a second pressure P. By pre-filling a chamber with purified pre-fill source at the first pressure Pwhich is substantially equal to the bulk source pressure P, the contaminants found in the bulk COremain within the bulk CO. Thus, this method and system reduces precipitation of contaminates caused by the depressurization of the bulk source during wafer processes and thereby reduces corresponding substrate material contamination.

7225820, Jun 5, 2007

Oct 6, 2003

10/680783

William Dale Jones - Phoenix AZ, US

Tokyo Electron Limited - Tokyo

B08B 3/02, H01L 21/306, C23C 16/00

134200, 134902, 15634529, 118715, 118733

A processing chamber having an improved sealing means is disclosed. The processing chamber comprises a lower element, an upper element, and a seal energizer. The seal energizer is configured to maintain the upper element against the lower element to maintain a processing volume. The seal energizer is further configured to generate a sealing pressure in a seal-energizing cavity that varies non-linearly with a processing pressure generated within the processing volume. In one embodiment, the seal energizer is configured to minimize a non-negative net force against one of the upper element and the lower element above a threshold value. The net force follows the equation P*A−P*A, where P equals the sealing pressure, P equals the processing pressure, A equals a cross-sectional area of the seal-energizing cavity, and A equals a cross-sectional area of the processing volume.

2006022, Oct 12, 2006

Mar 29, 2005

11/093944

William Jones - Phoenix AZ, US

B08B 3/00, H01L 21/306

13405600R, 156345130

A method and apparatus for controlling a pressure differential in a high pressure processing chamber are disclosed. The pressure differential is related to a difference between a pressure generated within the high pressure processing chamber and a sealing force for maintaining the high-pressure processing chamber. By maintaining the pressure differential within a predefined range, contaminants produced when forming and maintaining the processing chamber are reduced or eliminated.

2005002, Feb 3, 2005

Jul 29, 2003

10/630640

William Jones - Phoenix AZ, US

B08B003/02

13405800R, 13405600R, 134113000, 134094100, 134100100, 134102200, 134902000

A method and apparatus for supercritical processing of an object with a fluid. The apparatus comprises means for injecting a processing fluid and chemistry into the system, including means for starting and means for stopping the means for injecting, and means for substantially preventing fluid from re-entering the means for injecting. The method includes the steps of selectively injecting a processing fluid and chemistry. Also, the method includes substantially preventing fluid from returning to the source.