WEI WANG, MD
Neurology at Forest Ave, San Jose, CA

6758949, Jul 6, 2004

Sep 10, 2002

10/241114

Wei D. Wang - San Jose CA
Praburam Gopalraja - San Jose CA
Jianming Fu - Palo Alto CA

Applied Materials, Inc. - Santa Clara CA

C23C 1435

20419212, 20429806, 20429812, 20429817

A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D. C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.

6694066, Feb 17, 2004

Jun 11, 2001

09/879026

Ping Xie - San Jose CA
Simon Yuanxinag Wu - San Jose CA
Yalan Mao - Cupertino CA
Wei Wang - San Jose CA
R. Brad Bettman - Mountain View CA
Nadim Maluf - Mountain View CA

Finisar Corporation - Sunnyvale CA

G02B 600

385 11

The present invention provides optical filters that can be used in a range of telecommunications applications including optical multiplexers/demultiplexers, optical routers, and optical gain scalers. The optical filter is modular, using two or more couplers with a pair of delay paths between each pair of couplers in a sequence to generate a range of optical filter functions. The desired filter profile/function is obtained by proper selection of the coupling ratio for each coupler and by the length of each pair of delay paths. The couplers may be implemented as polarization or intensity beam splitters positioned along the optical path. Each coupler couples in controllable amounts, one or two inputs with the corresponding pair of delay paths. Where a coupler is implemented as a polarization beam splitter, the coupling is accomplished by input to the coupler of polarized light and by the subsequent separation of orthogonal “P” and “S” components of that light onto corresponding ones of the pair of delay paths. Where coupling is implemented with an intensity beam splitter, the coupling is accomplished by input of light with the percentage of reflection and transmission of the light determining the coupling ratio or percentage of the light input onto corresponding ones of the pair of delay paths.

2014004, Feb 13, 2014

Oct 15, 2013

14/054477

Xianmin TANG - San Jose CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Wei D. WANG - San Jose CA, US
Zhendong LIU - Tracy CA, US
Kevin MORAES - Fremont CA, US
Muhammad M. RASHEED - San Jose CA, US
Thanh X. NGUYEN - San Jose CA, US
Ananthkrishna JUPUDI - Milpitas CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/28, H01L 21/285

20419215, 20429808

Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

6845191, Jan 18, 2005

Sep 11, 2003

10/661991

Ping Xie - San Jose CA, US
Simon Yuanxiang Wu - San Jose CA, US
Yalan Mao - Cupertino CA, US
Wei Wang - San Jose CA, US
R. Brad Bettman - Mountain View CA, US
Nadim Maluf - Los Altos CA, US

Finisar Corporation - Sunnyvale CA

G02B 627

385 27, 385 28, 385 29

Methods for combining or splitting optical signals that include an odd channel set an even channel set. The methods of combining or splitting are performed by subjecting the odd and even channel sets to a first filter that applies phase retardations corresponding with odd integer multiples of half a wavelength for each center wavelength associated with a selected one of the odd and even set of channels and with integer multiples of a full wavelength of each center wavelength associated with a remaining one of the odd set and the even set. The channel sets are then subjected to a second filter that applies phase retardations that are complementary to those experienced by the odd and even set of channels in the first filter. This complementary filtration has the effect of reducing dispersion. These methods may be used in optical devices applicable to a range of telecommunications applications, including optical multiplexers/demultiplexers and optical routers.

6850364, Feb 1, 2005

Jun 12, 2002

10/170055

Ping Xie - Cupertino CA, US
R. Brad Bettman - Mountain View CA, US
Haisheng Rong - San Jose CA, US
Kevin Zhang - Santa Clara CA, US
Yalan Mao - Cupertino CA, US
Wei Wang - San Jose CA, US
Simon Yuanxiang Wu - San Jose CA, US

Finisar Corporation - Sunnyvale CA

G02B 530

359497, 359124, 359127, 359483, 359494, 359495, 359498

An optical device that can be used in a range of telecommunications applications including optical multiplexers/demultiplexers and optical routers. The optical device includes an optical processing loop which allows multi-stage performance characteristics to be achieved with a single physical filtration stage. Optical processing on the first leg and second legs of the loop is asymmetrical thereby improving the integrity of the optical signals by effecting complementary chromatic dispersion on the first and second legs. In an embodiment of the invention the optical device includes a fundamental filter cell, a retro reflector and a splitter/combiner. The fundamental filter cell filters optical signals propagating on each of two legs of an optical loop which intersects the fundamental filter cell. The fundamental filter cell operates as a full waveplate to the odd set of channels and a half waveplate to the even set of channels on a selected one of the two legs and as a half waveplate to the odd set of channels and a full waveplate to the even set of channels on a remaining one of the two legs. The retro reflector optically couples with the fundamental filter cell to reflect the optical signals from one of the two legs to an other of the two legs to form the optical loop.

8565284, Oct 22, 2013

Aug 13, 2007

11/838084

Paul D. Ta - Fremont CA, US
Wei Wang - San Jose CA, US
Alvin Wang - Saratoga CA, US
Peter D. Bradshaw - Sunnyvale CA, US

Intersil Americas Inc. - Milpitas CA

H04B 1/00

375130, 375133, 375141, 375146, 375147, 375149, 375269, 375296, 375327, 375371, 375376, 327144, 327156, 327291, 327298, 327296

A spread spectrum clock signal generator and an accompanying method provide a spread spectrum clock signal of a reduced electromagnetic interference. The spread spectrum clock signal generator includes (a) a state machine, which maintains a current state of the spread spectrum clock signal generator, receives as input value a next state of the spread spectrum clock signal generator and generates a clock phase selection signal based on the current and next states; (b) a random number generator for generating the next state; and (c) a waveform generation circuit for generating a spread spectrum clock signal based on the clock phase selection signal.

7295582, Nov 13, 2007

Jun 30, 2005

11/170893

Mark E. McDonald - Mill Valley CA, US
Wei Wang - San Jose CA, US

Intel Corporation - Santa Clara CA

H01S 3/10, H01S 3/13

372 20, 372 28, 372 32

Thermo-optic tuning apparatuses and techniques that may be used in external cavity lasers are provided. A wavelength selection device may be placed in the external cavity and may include a thermally responsive substrate and tunable optical elements extending therefrom. Heating and heat monitoring actuators may be formed in the substrate itself, with the tunable optical elements being mechanically positioned in the recesses of the substrate for thermo-optic tuning. In some examples, a separate optical path length adjustment element is also placed in the thermally responsive substrate, or elsewhere, for separate frequency tuning. This adjustment element may be part of a control that is detangled from the normal servo controls used in laser tuning.

8119525, Feb 21, 2012

Feb 26, 2008

12/037578

Jick M. Yu - San Jose CA, US
Wei D. Wang - San Jose CA, US
Rongjun Wang - Cupertino CA, US
Hua Chung - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/44

438674, 438675, 438677, 438686, 438687, 438688, 438641, 257E21586, 257E21587

Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

2009014, Jun 4, 2009

Nov 29, 2007

11/947459

John FORSTER - San Francisco CA, US
Anantha Subramani - San Jose CA, US
Wei D. Wang - San Jose CA, US

H05H 1/24, B05B 5/00

427576, 118621

A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.