WAYNE LEE JOHNSON
Pilots at 32 St, Phoenix, AZ

6758948, Jul 6, 2004

Aug 26, 2002

10/227526

Wayne L. Johnson - Phoenix AZ

Tokyo Electron Limited - Tokyo

C23C 1434

20419212, 20429806, 20429808, 20429811

A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an electromagnetic field generating system surrounding the plasma region for inductively coupling an electromagnetic field into the plasma region to ionize the gas and generate and maintain a high density, low potential plasma; a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate; a unit associated with the target for electrically biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and a substrate holder for holding the substrate at a location to permit material sputtered from the target to be deposited on the substrate.

6825090, Nov 30, 2004

Jul 3, 2003

10/611909

Wayne L. Johnson - Phoenix AZ

Tokyo Electron Limited - Tokyo

H01L 2120

438379, 438171, 438190, 361277, 361278

This invention relates to an apparatus and method of using a high frequency, high power, fluid dielectric variable capacitor for an impedance matching network. The apparatus consists of a bow-tie rotary vane, a set of two fixed vanes, and a set of rotating vanes adapted to rotate interdigitally between the fixed vanes. A dielectric fluid is circulated between the fixed vanes and the rotating vanes for cooling the device. This arrangement facilitates production of a device having a higher capacitance and a smaller size, thus making it suitable for use in a matching network.

6630364, Oct 7, 2003

Jun 27, 2002

10/149452

Wayne L. Johnson - Phoenix AZ

Tokyo Electron Limited - Tokyo

G01R 3126

438 14, 427 10, 427 9, 438 17

A method and system for controlling the bombardment of a wall ( ) of an electrically shielded RF (ESRF) source to control wall deposition. By measuring thickness of a deposit on a wall ( ), the method and system can determine how to control the bias voltage applied to the bias shield ( ) of the ESRF source. Thickness can be measured using any measurement technique (e. g. , microwave, eddy current probe, capacitive probe and interferometric).

6511577, Jan 28, 2003

Oct 12, 2000

09/686167

Wayne L. Johnson - Phoenix AZ

Tokyo Electron Limited - Tokyo

H01L 213065

15634548, 15634554, 15634544, 118723 R, 118723 I, 118729, 118723 E

A reduced impedance chamber for plasma processing leads to operational advantages including a plasma sheath voltage that is substantially independent of plasma impedance over a range of plasma impedances. The design of such a reduced impedance chamber includes a chuck assembly, a counter electrode, and a plasma source. The chuck assembly allows mounting of a workpiece for processing and includes a driven electrode and a ground portion. The plasma source operates to generate a plasma in the chamber from process gas. A wall portion of the plasma source is directly electrically connected to the counter electrode and to the ground portion of the chuck assembly. The counter electrode may include an inject-exhaust plate that is mounted in a position opposed to the chuck assembly and that operates to inject process gas into the chamber and to exhaust effluent.

4654509, Mar 31, 1987

Oct 7, 1985

6/784739

McDonald Robinson - Paradise Valley AZ
Ronald D. Behee - Tempe AZ
Wiebe B. deBoer - Amersfoort, NL
Wayne L. Johnson - Phoenix AZ

Epsilon Limited Partnership - Tempe AZ

F27D 1100

219405

In an epitaxial deposition reactor with an axially symmetric gas flow carrying the deposition materials, apparatus and method for heating the substrate and associated susceptor uniformly is described. The apparatus includes at least one chamber having a plurality of heat lamps passing therethrough, the chamber being generally disposed symmetrically with respect to an axis of the substrate. The walls of the chamber are appropriately coated to reflect the light from the heat lamps and the outermost lamps can be energized to produce a higher temperature than the centrally located lamps to compensate for regions of the reactor that provide access to the substrate and therefore promote thermal losses. The spacing of the lamps can be varied also to compensate for thermal non-uniformity of the heating cavity. In a first embodiment, a lower chamber can be a chamber similar to the first chamber with the exception that the lamps are rotated 90. degree.

2004001, Jan 29, 2004

Jun 11, 2003

10/458801

Maolin Long - Guangzhou, CN
Richard Parsons - Phoenix AZ, US
Wayne Johnson - Phoenix AZ, US

Tokyo Electron Limited - Tokyo

B01J019/08

422/186040, 422/186290

A segmented chuck provides uniform processing of a workpiece (e.g., a wafer) with a plasma in a process chamber. The segmented chuck includes a segmented electrode having a plurality of sub-electrodes where the sub-electrodes are electrically isolated from one another by insulating connections and the segmented electrode defines a process surface that is adapted to receive the workpiece. The segmented chuck also includes a plurality of RF drivers for driving the sub-electrodes with RF biases, where the RF biases couple the workpiece with the plasma in the process chamber. By allowing the workpiece to be placed on the chuck, the coupling between the plasma and the workpiece is enhanced. By allowing the sub-electrodes to be independently driven by RF drivers, more uniform processing can be achieved with larger workpieces.

2002018, Dec 12, 2002

Jun 21, 2002

10/175806

Wayne Johnson - Phoenix AZ, US
Murray Sirkis - Tempe AZ, US

TOKYO ELECTRON LIMITED - Tokyo

C23F001/00, C03C025/68, C23C016/00, H01L021/469, H01L021/31

427/569000, 118/72300I, 156/345480, 216/068000, 438/710000, 438/788000

A method and system for reducing damage to substrates (e.g., wafers) during plasma processing by using a high pressure source. A thin electrostatic shield enables a large number of thin slots to be formed in an electrostatic shield while still being able to excite the plasma. The bottom of the slots and the top of the substrate are separated such that the mean free path of the plasma particles is between 0.5% and 2% of the distance between the bottom of the slots and the substrate holder.

RE40195, Apr 1, 2008

Dec 10, 1999

11/128405

Wayne L. Johnson - Phoenix AZ, US

Tokyo Electron Limited

H05H 1/00, H01L 21/306, H01L 21/3065, C23C 16/00, C23C 16/505

118723I, 118723 R, 118723 E, 15634548

A chamber housing () enclosing a plasma region () in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing () being composed of: a housing member () constituting a substantially vertically extending wall () surrounding a space () corresponding to the plasma region (), the housing member () having a plurality of openings () and electrically conductive elements forming an electrostatic shield around the space; a plurality of dielectric members () each having a peripheral edge and each disposed to close a respective opening (); and sealing members (′) forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members ().

2012027, Oct 25, 2012

Apr 20, 2012

13/452442

Wayne L. JOHNSON - Phoenix AZ, US
Steven T. FINK - Mesa AZ, US

ARIZONA TECHNOLOGY INNOVATION GROUP, L.L.C. - Phoenix AZ

C12M 1/42, F21V 7/00, F21V 21/00, C12M 1/36, C12N 1/12

4352571, 4352921, 4352865, 4352866, 4352861, 36224902, 362235

Systems and methods for cultivating photoautotrophic microorganisms are described. The systems and methods include a photo-bioreactor system and method for growing and harvesting algae in a mass production environment.