TRUNG CHANH LAM, PHARM D
Pharmacy at Toscana Way, San Diego, CA
License number
California 57245
Category
Pharmacy
Type
Pharmacist
Address
Address
5350 Toscana Way APT E107, San Diego, CA 92122
Phone
(626) 757-1462
Personal information
See more information about TRUNG CHANH LAM at radaris.comName
Address
Phone
3540 Priscilla Dr, West Covina, CA 91792
437 W James St, Rialto, CA 92376
3545 Cogswell Rd, El Monte, CA 91732
34512 Torrey Pine Ln, Union City, CA 94587
45364 Via Jaca, Temecula, CA 92592
Professional information
Trung Lam - San Diego, CA
Work:
Cricket Communications Inc
Administrative Assistant CellGate USA - Irvine, CA
Administrative/ Technician
Administrative Assistant CellGate USA - Irvine, CA
Administrative/ Technician
Education:
Mesa College
Medical Assistant Brooks College
Associate of Science Mission Bay High
High School Diploma
Medical Assistant Brooks College
Associate of Science Mission Bay High
High School Diploma
Skills:
Microsoft Office 2013, All Orders, QuickBooks Enterprise, FedEx/UPS Shipping, Fluent in Vietnamese, SpringCM, IRB Billing System, Data Entry, Multi-Phone Line
Compact Lumped Element Ring Balun Layout
US Patent:
6693499, Feb 17, 2004
Filed:
Apr 2, 2002
Appl. No.:
10/114166
Inventors:
William R. Goyette - San Marcos CA
Karl D. Peterschmidt - Carlsbad CA
Trung H. Lam - San Diego CA
Karl D. Peterschmidt - Carlsbad CA
Trung H. Lam - San Diego CA
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
H04B 152
US Classification:
333118, 333 25, 333112
Abstract:
A lumped element ring balun ( ) including elements patterned on a monolithic substrate ( ) in a compact design. The balun ( ) includes four inductors ( ) and a plurality of capacitors ( ) electrically coupled together to provide RF output signals that are 180° out of phase with each other. The inductors ( ) are symmetrically disposed in a rectangular area on the substrate ( ). A first pair of the inductors ( ) is positioned at one end of the rectangular area, and a second pair of the inductors ( ) is positioned at opposite end of the rectangular area. All of the capacitors are formed on the substrate ( ) in a central circuit area ( ) between the first pair of inductors ( ) and the second pair of inductors ( ). Inner ends ( ) are coupled to circuit elements in the circuit area ( ) by a metallized trace ( ) extending through an air bridge ( ).
Compact Lumped Element Dual Highpass/Lowpass Balun Layout
US Patent:
2003018, Oct 2, 2003
Filed:
Apr 2, 2002
Appl. No.:
10/114700
Inventors:
William Goyette - San Marcos CA, US
Karl Peterschmidt - Carlsbad CA, US
Trung Lam - San Diego CA, US
Karl Peterschmidt - Carlsbad CA, US
Trung Lam - San Diego CA, US
International Classification:
H03H005/00
US Classification:
333/025000
Abstract:
A circuit layout for a lumped element dual-balun () where the elements of the dual-balun () are patterned on a monolithic substrate () in a compact design. The dual-balun () includes four inductors () and four capacitors () electrically coupled together to provide two zero phase RF output signals and two 180° phase RF output signals. The inductors () are symmetrically disposed in a rectangular area on the substrate (). A first pair of the inductors () is positioned at one end of the rectangular area, and a second pair of the inductors () is positioned at an opposite end of the rectangular area. The capacitors () are formed on the monolithic substrate () in a central circuit area () between the first pair () and the second pair of inductors (). RF output lines () are coupled to circuit elements in the circuit area () and extend out of the circuit area () between the first pair and the second pair of the inductors ().
Low Noise Amplifier With Fixed Loss Bypass
US Patent:
6838933, Jan 4, 2005
Filed:
Jul 30, 2003
Appl. No.:
10/630893
Inventors:
William R. Goyette - San Marcos CA, US
Harry S. Harberts - San Marcos CA, US
Trung H. Lam - San Diego CA, US
Harry S. Harberts - San Marcos CA, US
Trung H. Lam - San Diego CA, US
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
H03F 114
US Classification:
330 51, 330254, 330307
Abstract:
A low noise amplifier (LNA) has a selectable bypass signal path integrated into the same integrated circuit (IC) as the amplifier components. In a normal mode of operation, an integrated mode switch allows an appropriate biasing signal to be applied LNA transistors, which function to amplify an input signal and produce an amplified output signal. In an attenuation mode, which is activated to handle large input signals, the LNA transistors are switched off and the input signal is attenuated by a voltage divider, which provides an attenuated output on a signal path that bypasses the LNA amplifier. An attenuation switching signal not only operates the mode switch in the LNA, but also selects between the normal and bypass outputs of the LNA, for further amplification downstream of the LNA.