TRAVIS THOMS
Mental Health at Sun Rnch Vlg Loop, Los Lunas, NM

License number
New Mexico 0170091
Category
Mental Health
Type
Mental Health
Address
Address 2
526 Sun Ranch Village Loop, Los Lunas, NM 87031
1135 La Vega Rd, Bosque Farms, NM 87068
Phone
(505) 388-9055

Professional information

Travis Thoms Photo 1

Dielectric Oxide Films And Method For Making Same

US Patent:
2010031, Dec 9, 2010
Filed:
Mar 23, 2010
Appl. No.:
12/730151
Inventors:
Mark Phillps - Albuquerque NM, US
Travis Thoms - Bosque Farms NM, US
Saul Ferguson - Albuquerque NM, US
International Classification:
C04B 35/468, C01G 23/047, C04B 35/462, C01G 35/00, C01G 23/04, B05D 5/12, C04B 35/01
US Classification:
501138, 423610, 501134, 42359417, 423598, 4271263, 264104, 977773
Abstract:
Dielectric oxide materials prepared by producing a sol from a mixture of a metal oxide precursor, a solvent, and an epoxide, and preparing a metal oxide material from the sol. In various versions, the mixture can also include a cosolvent, one or more additional metal oxide precursors, water, or a precursor to a glassforming oxide, or any combination thereof. The prepared dielectric oxide materials can be in the form of thin films having high κ values, low electrical leakage, and low dielectric loss tangent values.


Travis Thoms Photo 2

High-Dielectric Constant Thin Film Metal Oxides On Silicon Wafers For Capacitor Applications And Methods Of Manufacture

US Patent:
2008022, Sep 11, 2008
Filed:
Mar 6, 2008
Appl. No.:
12/043309
Inventors:
Shyama P. Mukherjee - Carry NC, US
Mark L.F. Phillips - Albuquerque NM, US
Travis P.S. Thoms - Bosque Farms NM, US
International Classification:
B05D 5/12
US Classification:
427 79, 4271263
Abstract:
A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.


Travis Thoms Photo 3

Low K Dielectric

US Patent:
2009001, Jan 15, 2009
Filed:
Jun 13, 2008
Appl. No.:
12/157830
Inventors:
Mark L. F. Phillips - Albuquerque NM, US
Travis P.S. Thoms - Bosque Farms NM, US
International Classification:
B32B 3/26, C09K 19/52, B32B 3/10, B05D 3/02, B05D 3/04
US Classification:
4281951, 2522996, 438778, 4273977, 427337, 4283044, 257E21266
Abstract:
A spin-on dielectric of novel composition formed as a sol comprising an a source of silicon such as an orthosilicate ester, alone or in combination with an alkylated orthosilicate ester, a polar solvent, water, an acid catalyst, which may be a strong acid catalyst, and an amphiphilic block copolymer surfactant, optionally including an organic acid, a co-solvent and/or a reactive solvent. Also provided is a method of formulating the sol, a film made from the spin-on dielectric that has desirable electrical and mechanical properties, methods for treating the film described to optimize the film's electrical and mechanical performance, and methods for depositing the film onto silicon, steel or other surfaces.


Travis Thoms Photo 4

Low K Dielectric

US Patent:
2011013, Jun 9, 2011
Filed:
Jan 20, 2011
Appl. No.:
13/010573
Inventors:
Mark L. F. Phillps - Albuquerque NM, US
Travis P.S. Thoms - Bosque Farms NM, US
International Classification:
C08K 5/5419, H01B 3/20, B05D 5/12
US Classification:
427595, 252573, 524261, 427 77, 427240
Abstract:
A spin-on dielectric of novel composition formed as a sol comprising an a source of silicon such as an orthosilicate ester, alone or in combination with an alkylated orthosilicate ester, a polar solvent, water, an acid catalyst, which may be a strong acid catalyst, and an amphiphilic block copolymer surfactant, optionally including an organic acid, a co-solvent and/or a reactive solvent. Also provided is a method of formulating the sol, a film made from the spin-on dielectric that has desirable electrical and mechanical properties, methods for treating the film described to optimize the film's electrical and mechanical performance, and methods for depositing the film onto silicon, steel or other surfaces.