TODD ROBERT SMITH, MD
Osteopathic Medicine in Meridian, ID
License number
Idaho MD419930
Category
Osteopathic Medicine
Type
Emergency Medicine
Address
Address
3835 S FIRENZE WAY, Meridian, ID 83642
Phone
(801) 699-3892
Professional information
Capacitor And Method Of Forming A Capacitor
US Patent:
6300187, Oct 9, 2001
Filed:
Nov 24, 1998
Appl. No.:
9/198826
Inventors:
Todd E. Smith - Meridian ID
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 218242
US Classification:
438239
Abstract:
The invention comprises capacitors and methods of forming capacitors. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. An Si. sub. 3 N. sub. 4 comprising capacitor dielectric layer is formed over the first capacitor electrode. The Si. sub. 3 N. sub. 4 comprising layer is oxidized in the presence of a chlorine containing atmosphere under conditions which form a silicon oxynitride layer comprising chlorine atop the Si. sub. 3 N. sub. 4 layer. In one aspect, the oxidizing sequentially comprises a dry oxidation in the presence of an oxygen containing gas in the substantial absence of chlorine, a dry oxidation in the presence of a gas comprising oxygen and chlorine, and a wet oxidation comprising chlorine. A second capacitor electrode is formed over the chlorine containing silicon oxynitride layer. In one implementation, a method of forming a capacitor comprises forming a first capacitor electrode.
Capacitor And Method Of Forming A Capacitor
US Patent:
6313496, Nov 6, 2001
Filed:
Aug 31, 2000
Appl. No.:
9/654930
Inventors:
Todd E. Smith - Meridian ID
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 27108
US Classification:
257296
Abstract:
The invention comprises capacitors and methods of forming capacitors. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. An Si. sub. 3 N. sub. 4 comprising capacitor dielectric layer is formed over the first capacitor electrode. The Si. sub. 3 N. sub. 4 comprising layer is oxidized in the presence of a chlorine containing atmosphere under conditions which form a silicon oxynitride layer comprising chlorine atop the Si. sub. 3 N. sub. 4 layer. In one aspect, the oxidizing sequentially comprises a dry oxidation in the presence of an oxygen containing gas in the substantial absence of chlorine, a dry oxidation in the presence of a gas comprising oxygen and chlorine, and a wet oxidation comprising chlorine. A second capacitor electrode is formed over the chlorine containing silicon oxynitride layer. In one implementation, a method of forming a capacitor comprises forming a first capacitor electrode.