TIMOTHY S CLEARY, M.D.
Osteopathic Medicine at Barnes Rd, Portland, OR

6755954, Jun 29, 2004

Apr 4, 2002

10/116077

Steven T. Mayer - Lake Oswego OR
Timothy Patrick Cleary - Portland OR
Michael John Janicki - West Linn OR
Edmund B. Minshall - Sherwood OR
Thomas A. Ponnuswamy - Tulatin OR

Novellus Systems, Inc. - San Jose CA

C25D 500

205 96, 205123, 205125, 205157, 204224 R, 204DIG 7

An apparatus for electrochemical treatment of a substrate, in particular for electroplating an integrated circuit wafer. An apparatus preferably includes dynamically operable concentric anodes and dielectric shields in an electrochemical bath. Preferably, the bath height of an electrochemical bath, the substrate height, and the shape and positions of an insert shield and a diffuser shield are dynamically variable during electrochemical treatment operations. Step include varying anode current, bath height and substrate height, shield shape, and shield position.

7338908, Mar 4, 2008

Oct 20, 2003

10/690084

Daniel A. Koos - Chandler AZ, US
Steven T. Mayer - Lake Oswego OR, US
Heung L. Park - Wilsonville OR, US
Timothy Patrick Cleary - Portland OR, US
Thomas Mountsier - San Jose CA, US

Novellus Systems, Inc. - San Jose CA

H01L 21/302

438745, 438750, 438751

An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.

7531463, May 12, 2009

Oct 24, 2006

11/586394

Daniel A. Koos - Portland OR, US
Steven T. Mayer - Lake Oswego OR, US
Heung L. Park - Wilsonville OR, US
Timothy Patrick Cleary - Portland OR, US
Thomas Mountsier - San Jose CA, US

Novellus Systems, Inc. - San Jose CA

H01L 21/302

438754, 438745, 438753

An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.

7229339, Jun 12, 2007

Jul 2, 2004

10/884371

John F. Stumpf - Phoenix AZ, US
Franklin D. Root - Phoenix AZ, US
Brian Severson - Chandler AZ, US
David Marquardt - Phoenix AZ, US
John Derwood Herb - Phoenix AZ, US
James Jed Crawford - Chandler AZ, US
Rand Conner - Chandler AZ, US
Jasent Montano - Chandler AZ, US
Kevin Bertsch - Gilbert AZ, US
Robert Marshall Stowell - Wilsonville OR, US
Edmund Minshall - Sherwood OR, US
Timothy Cleary - Portland OR, US

Novellus Systems, Inc. - San Jose CA

B24B 5/00

451 8, 451 41, 451285

Methods and apparatus are provided for the chemical mechanical planarization (CMP) of a surface of a work piece. In accordance with one embodiment of the invention the apparatus comprises a plurality of CMP systems, a plurality of load cups for loading unprocessed work pieces into and unloading processed work pieces from the plurality of CMP systems, a plurality of cleaning stations for cleaning processed work pieces unloaded from the CMP systems, and a single robot configured to transfer unprocessed work pieces to the plurality of load cups and to transfer processed work pieces from the load cups to the plurality of cleaning stations.

7897198, Mar 1, 2011

Sep 3, 2002

10/235420

Heung L. Park - Wilsonville OR, US
Eric G. Webb - Salem OR, US
Jonathan D. Reid - Sherwood CA, US
Timothy Patrick Cleary - Portland OR, US

Novellus Systems, Inc. - San Jose CA

C23C 18/31, C23C 18/34, C23C 18/36, C23C 18/40, H01L 21/44

427 971, 427 986, 427 991, 427 995, 427265, 427304, 427305, 427437, 427438, 4274431, 438678, 438653, 438656, 438685, 438687

Electroless plating is performed to deposit conductive materials on work pieces such as partially fabricated integrated circuits. Components of an electroless plating bath are separately applied to a work piece by spin coating to produce a very thin conductive layer (in the range of a few hundred angstroms). The components are typically a reducing agent and a metal source.

2004006, Apr 8, 2004

Jun 30, 2003

10/609518

Steven Mayer - Lake Oswego OR, US
Jonathan Reid - Sherwood OR, US
Timothy Cleary - Portland OR, US
Edmund Minshall - Sherwood OR, US
R. Stowell - Wilsonville OR, US
Heung Park - Wilsonville OR, US

Novellus Systems, Inc. - San Jose CA

C25D017/00

204/198000

A treating head having a treating surface and a substrate treatment surface define a thin fluid gap that is filled with reactant liquid to form a thin liquid layer on the substrate for conducting a liquid chemical reaction treatment or other liquid treatment of the substrate. The thin liquid layer has a volume in a range of about from 50 ml to 500 ml. Preferably, the chemical composition, temperature, and other properties of liquid in the thin liquid layer are dynamically variable.