TIMOTHY J ANDERSON
Nursing at 3 St, Gainesville, FL
License number
Florida 200410
Issued Date
Oct 9, 2009
Effective Date
Jan 16, 2015
Expiration Date
Dec 31, 2012
Category
Health Care
Type
Certified Nursing Assistant
Address
Address
321 SE 3Rd St APT F11, Gainesville, FL 32601
Phone
(321) 652-1330
Professional information
Mocvd Of Wnx Thin Films Using Imido Precursors
US Patent:
6596888, Jul 22, 2003
Filed:
May 15, 2001
Appl. No.:
09/858037
Inventors:
Lisa McElwee-White - Gainesville FL
Timothy J. Anderson - Gainesville FL
Steven W. Johnston - San Jose CA
Carlos G. Ortiz - Houston TX
Omar J. Bchir - Gainesville FL
Timothy J. Anderson - Gainesville FL
Steven W. Johnston - San Jose CA
Carlos G. Ortiz - Houston TX
Omar J. Bchir - Gainesville FL
Assignee:
University of Florida - Gainesville FL
International Classification:
C07F 1100
US Classification:
556 59, 556 57, 546 2, 549206, 427255394, 427593, 106 105, 106 122, 106 125
Abstract:
Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula L W(NR)X , where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and L and X are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.
Crack Free Multilayered Devices, Methods Of Manufacture Thereof And Articles Comprising The Same
US Patent:
8222057, Jul 17, 2012
Filed:
Aug 23, 2010
Appl. No.:
12/861614
Inventors:
Olga Kryliouk - Sunnyvale CA, US
Timothy J. Anderson - Gainesville FL, US
Timothy J. Anderson - Gainesville FL, US
Assignee:
University of Florida Research Foundation, Inc. - Gainesville FL
International Classification:
H01L 21/00
US Classification:
438 22, 438 48, 257 11, 257 14
Abstract:
Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks.
Nanocrystalline Copper Indium Diselenide (Cis) And Ink-Based Alloys Absorber Layers For Solar Cells
US Patent:
2013011, May 16, 2013
Filed:
Jun 22, 2011
Appl. No.:
13/805804
Inventors:
Timothy James Anderson - Gainesville FL, US
Chinho Park - Seoul, KR
Rangarajan Krishnan - Hillsboro OR, US
Umme Farva - Sitapur, IN
Chinho Park - Seoul, KR
Rangarajan Krishnan - Hillsboro OR, US
Umme Farva - Sitapur, IN
Assignee:
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. - GAINESVILLE FL
International Classification:
H01L 31/18, H01L 31/032, H01L 31/0272
US Classification:
136264, 423508, 2525011, 438 95, 977773, 977896, 977824
Abstract:
Embodiments of the invention are to a copper indium diselenide (CIS) comprising nanoparticle where the nanoparticle includes a CIS phase and a second phase comprising a copper selenide. The CIS comprising nanoparticles are free of surfactants or binding agents, display a narrow size distribution and are 30 to 500 nm in cross section. In an embodiment of the invention, the CIS comprising nanoparticles are combined with a solvent to form an ink. In another embodiment of the invention, the ink can be used for screen or ink-jet printing a precursor layer that can be annealed to a CIS comprising absorber layer for a photovoltaic device.
Group Iii-Nitrides On Si Substrates Using A Nanostructured Interlayer
US Patent:
2007010, May 17, 2007
Filed:
Aug 29, 2006
Appl. No.:
11/512615
Inventors:
Olga Kryliouk - Gainesville FL, US
Hyun Park - Gainesville FL, US
Timothy Anderson - Gainesville FL, US
Hyun Park - Gainesville FL, US
Timothy Anderson - Gainesville FL, US
Assignee:
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. - GAINESVILLE FL
International Classification:
H01L 29/20, H01L 21/00
US Classification:
257103000, 257615000, 438046000, 438483000
Abstract:
A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured InGaN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.
Group Iii-Nitrides On Si Substrates Using A Nanostructured Interlayer
US Patent:
8268646, Sep 18, 2012
Filed:
Oct 24, 2008
Appl. No.:
12/257567
Inventors:
Olga Kryliouk - Gainesville FL, US
Hyun Jong Park - Gainesville FL, US
Timothy J. Anderson - Gainesville FL, US
Hyun Jong Park - Gainesville FL, US
Timothy J. Anderson - Gainesville FL, US
Assignee:
University of Florida Research Foundation, Inc. - Gainesville FL
International Classification:
H01L 21/00
US Classification:
438 20, 438 22, 438 48
Abstract:
A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured InGaN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.
Group Iii-Nitride Growth On Si Substrate Using Oxynitride Interlayer
US Patent:
6906351, Jun 14, 2005
Filed:
Aug 5, 2003
Appl. No.:
10/634220
Inventors:
Olga Kryliouk - Gainesville FL, US
Timothy J. Anderson - Gainesville FL, US
Michael Anthony Mastro - Alexandria VA, US
Timothy J. Anderson - Gainesville FL, US
Michael Anthony Mastro - Alexandria VA, US
Assignee:
University of Florida Research Foundation, Inc. - Gainesville FL
International Classification:
H01L029/22
US Classification:
257 78, 438604
Abstract:
A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride layer can be formed by nitridation of a native oxide layer. One or more integrated electronic circuits and/or integrated optical or optoelectronic devices can be built on the article.