THOMAS W ADAMS
Engineers in Emmaus, PA
License number
Pennsylvania PE029448E
Category
Engineers
Type
Professional Engineer
Address
Address
Emmaus, PA 18049
Professional information
Method Of Averaging Focus Through Scattered Energy Determination
US Patent:
6500591, Dec 31, 2002
Filed:
Feb 9, 1999
Appl. No.:
09/248519
Inventors:
Thomas Evans Adams - Emmaus PA
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 30
Abstract:
A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i. e. , a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.
Seimconductor Integrated Circuit Fabrication Utilizing Latent Imagery
US Patent:
5362585, Nov 8, 1994
Filed:
Apr 7, 1993
Appl. No.:
8/045346
Inventors:
Thomas E. Adams - Emmaus PA
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
G03C 500
US Classification:
430 30
Abstract:
A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i. e. , a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.
Method Of Fabricating An Integrated Circuit With Lines Of Critical Width Extending In The Astigmatically Preferred Direction Of The Lithographic Tool
US Patent:
5334541, Aug 2, 1994
Filed:
Dec 31, 1992
Appl. No.:
7/999731
Inventors:
Thomas E. Adams - Emmaus PA
Kuo-Hua Lee - Lower Macungie Township, Lehigh County PA
William J. Nagy - Bethlehem PA
Janmye Sung - Lower Macungie Township, Lehigh County PA
Kuo-Hua Lee - Lower Macungie Township, Lehigh County PA
William J. Nagy - Bethlehem PA
Janmye Sung - Lower Macungie Township, Lehigh County PA
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21285
US Classification:
437 8
Abstract:
A semiconductor memory cell with parallel gates is disclosed. The direction of the gates is desirably chosen to minimize lithographic astigmatic effects. Thus gates of comparatively uniform width are produced and predictability of transistor performance thereby improved. Another embodiment of the invention features a connection between two conductive layers and a source/drain. The connection forms a node between one access transistor and one pull-down transistor.
Lithography Tool Adjustment And Semiconductor Integrated Circuit Fabrication Utilizing Latent Imagery
US Patent:
5981119, Nov 9, 1999
Filed:
Feb 9, 1999
Appl. No.:
9/247301
Inventors:
Thomas Evans Adams - Emmaus PA
Assignee:
Lucent Technologies, Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 30
Abstract:
A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i. e. , a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.
Method Of Adjusting Lithography Tool Through Scattered Energy Measurement
US Patent:
5989764, Nov 23, 1999
Filed:
Feb 9, 1999
Appl. No.:
9/247055
Inventors:
Thomas Evans Adams - Emmaus PA
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 30
Abstract:
A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i. e. , a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.
Method Of Spiral Resist Deposition
US Patent:
5532192, Jul 2, 1996
Filed:
Dec 14, 1994
Appl. No.:
8/355757
Inventors:
Thomas E. Adams - Emmaus PA
Assignee:
AT&T Corp. - Murray Hill NJ
International Classification:
H01L 21312
US Classification:
437229
Abstract:
A method of depositing a material upon a substrate is disclosed. A material, such as photoresist, is deposited upon a substrate such as a semiconductor wafer by spinning the substrate and commencing deposition at the edge of the wafer and moving inward in a spiral pattern. The method produces a more uniform coating than hitherto available.
Lithography Tool Adjustment Utilizing Latent Imagery
US Patent:
5968693, Oct 19, 1999
Filed:
Feb 9, 1999
Appl. No.:
9/246512
Inventors:
Thomas Evans Adams - Emmaus PA
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 30
Abstract:
A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i. e. , a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.
Method Of Spiral Resist Deposition
US Patent:
5395803, Mar 7, 1995
Filed:
Sep 8, 1993
Appl. No.:
8/118538
Inventors:
Thomas E. Adams - Emmaus PA
Assignee:
AT&T Corp. - Murray Hill NJ
International Classification:
H01L 21312, H01L 2147
US Classification:
437229
Abstract:
A method of depositing a material upon a substrate is disclosed. A material, such as photoresist, is deposited upon a substrate such as a semiconductor wafer by spinning the substrate and commencing deposition at the edge of the wafer and moving inward in a spiral pattern. The method produces a more uniform coating than hitherto available.