Inventors:
Israel A. Lesk - Phoenix AZ
Clarence A. Lund - Phoenix AZ
Thomas C. Smith - Scottsdale AZ
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
H01L 21268
Abstract:
Charge on a floating gate of a semiconductor device structure is neutralized by illuminating the structure with a high intensity light during process steps that inject charge. The light provides for the formation of electrons, or free carriers, in the semiconductor substrate. The electrons facilitate tunneling which prevents dielectric degradation or rupture.