DR. THOMAS P. WERNER, P.T., PH.D.
Physical Therapy at Bee Cave Rd, Austin, TX
License number
Texas PT13162
Category
Restorative Service Providers
Type
Physical Therapist
License number
Texas 0440
Category
Restorative Service Providers
Type
Physical Therapist
License number
Texas 1194947
Category
Restorative Service Providers
Type
Physical Therapist
License number
Texas 2815-24
Category
Restorative Service Providers
Type
Physical Therapist
Address
Address
2
5000 Bee Cave Rd STE 204, Austin, TX 78746
PO Box 4688, Incline Village, NV 89450
PO Box 4688, Incline Village, NV 89450
Phone
(512) 329-6617
(512) 329-6772 (Fax)
(775) 745-5695
(512) 329-6772 (Fax)
(775) 745-5695
Personal information
See more information about THOMAS P. WERNER at radaris.comName
Address
Phone
412 Champions Dr, Brownsville, TX 78520
945 Divot Ct #2, Incline Vlg, NV 89451
PO Box 1482, Pearland, TX 77588
6281 Chert Ave, Las Vegas, NV 89139
7950 Flamingo Rd, Las Vegas, NV 89147
Professional information
Thomas P Werner, West Lake Hills TX - PT (Physical therapy)
Specialties:
Physical Therapy
Address:
5000 Bee Caves Rd SUITE 204, West Lake Hills 78746
(512) 329-6617 (Phone), (512) 329-6772 (Fax)
(512) 329-6617 (Phone), (512) 329-6772 (Fax)
Languages:
English
Process For Forming An Isolation Region With Trench Cap
US Patent:
5976948, Nov 2, 1999
Filed:
Feb 19, 1998
Appl. No.:
9/026285
Inventors:
Thomas Werner - Austin TX
Robert Dawson - Austin TX
Robert Dawson - Austin TX
Assignee:
Advanced Micro Devices - Austin TX
International Classification:
H01L 2176
US Classification:
438424
Abstract:
A method for producing a semiconductor device using an improved trench isolation technique includes, first, forming a masking layer over a device layer. A first portion of the masking layer and an underlying portion of the device layer are removed to form at least one trench. A second portion of the masking layer is then selectively removed from a region adjacent the trench and above the device layer. A dielectric layer is formed in the trench so that the dielectric layer at least partially fills the trench and the region adjacent to the trench and above the device layer. The dielectric layer includes a trench cap above the trench isolation region and the device layer. The trench cap extends laterally and longitudinally above and beyond the trench isolation region, in accordance with the second portion of the masking layer which was removed. This enlarged trench cap permits the removal of a portion of the dielectric material from the trench cap during subsequent processing without the consequent formation of substantial voids between the dielectric material in the trench and the device layer.