THOMAS GARY RICHARDSON
Pilots in Portland, OR
License number
Oregon A1586959
Issued Date
Jan 2017
Expiration Date
Jan 2019
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
PO Box 20661, Portland, OR 97294
Personal information
See more information about THOMAS GARY RICHARDSON at radaris.comName
Address
Phone
5045 Whiteaker St, Eugene, OR 97405
552 Holmes Ln, Oregon City, OR 97045
Professional information
Semiconductor Device And Method For Fabricating The Same
US Patent:
6664174, Dec 16, 2003
Filed:
Aug 14, 2001
Appl. No.:
09/928489
Inventors:
Taiji Ema - Kawasaki, JP
Edward J. Swenson - Portland OR
Thomas W. Richardson - Portland OR
Yunlong Sun - Portland OR
Edward J. Swenson - Portland OR
Thomas W. Richardson - Portland OR
Yunlong Sun - Portland OR
Assignee:
Fujitsu Limited - Kawasaki
Electro Scientific Industries Incorporated - Portland OR
Electro Scientific Industries Incorporated - Portland OR
International Classification:
H01L 2144
US Classification:
438601, 438132, 438215
Abstract:
The semiconductor device includes a blocking layer formed on a substrate , an insulation film formed on the blocking layer , and a fuse formed on the insulation film. The blocking layer is formed below the fuse , whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.
Semiconductor Device And Method For Fabricating The Same
US Patent:
6297541, Oct 2, 2001
Filed:
Jan 28, 1999
Appl. No.:
9/238171
Inventors:
Taiji Ema - Kawasaki, JP
Edward J. Swenson - Portland OR
Thomas W. Richardson - Portland OR
Yunlong Sun - Portland OR
Edward J. Swenson - Portland OR
Thomas W. Richardson - Portland OR
Yunlong Sun - Portland OR
Assignee:
Fujitsu Limited - Kawasaki
Electro Scientific Industries Incorporated - Portland OR
Electro Scientific Industries Incorporated - Portland OR
International Classification:
H01L 2358, H01L 2362
US Classification:
257665
Abstract:
The semiconductor device comprises a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.