THOMAS C BROWN
Electrician at Westcreek Dr, Austin, TX

6613688, Sep 2, 2003

Apr 26, 2002

10/133061

Thomas M. Brown - Austin TX
Edward O. Travis - Austin TX
Jeffrey C. Haines - Austin TX

Motorola, Inc. - Schaumburg IL
Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 21302

438710, 451 41, 438692

A model-based approach for generating an etch pattern to decrease topographical uniformity involves placing reverse dummy features ( ) in a region of a semiconductor substrate ( ) according to the topography of the region and adjacent regions. The reverse dummy features are placed inconsistently over the semiconductor substrate ( ) because the need for reverse dummy features is inconsistent and varies from design to design. In one embodiment, the reverse dummy features ( ) having varying widths are placed with varying spacing between them and are placed in different regions. The determination of location, size and spacing of the reverse dummy features ( ) is determined based upon the uniformity effect over the entire semiconductor die and may be used in conjunction with the placement of printed dummy features. After placing the reverse dummy features ( ), a planarization process may be performed to remove the reverse dummy features, which improves the planarization.

6057068, May 2, 2000

Dec 4, 1998

9/205483

Christopher H. Raeder - Austin TX
Thomas Brown - Austin TX
Peter A. Burke - Newark DE

Advanced Micro Devices, Inc. - Austin TX

G03F 900

430 30

A method for measuring the planarization efficiency of a planarization process and a device for use with the method are provided. The device may be a substrate having a set of isolated features, such as trenches or hills, with different widths. In the method, a removable layer of material is formed over the substrate. The substrate features form corresponding features in the removable layer with varying dimensions. A pre-planarization thickness of the removable layer of material is measured at each feature and at one or more of isolation areas. The removable layer of material is then planarized using a planarization process associated with one or more process parameters. A post-planarization thickness of the removable is measured at each feature and at one or more of the isolation regions. The planarization efficiency of the planarization process is then determined as a function of the dimensions of the substrate features or corresponding features in the removable layers and/or one or more process parameters. The determined planarization efficiency may be output by, for example, generating a graph of the planarization efficiency or using the planarization efficiency to change one or more parameters of the planarization process.

6905967, Jun 14, 2005

Mar 31, 2003

10/401400

Ruiqi Tian - Pflugerville TX, US
Thomas Michael Brown - Austin TX, US

AMD, Inc. - Sunnyvale CA
Motorola, Inc. - Shaumberg IL

H01L021/311

438697, 438626, 438691, 438692, 438129, 438424, 438631, 438645, 438599, 257752, 257750, 257620

In a feature layer of a semiconductor wafer, dummy tiles which overcome the tendency of dishing and erosion to occur during a CMP process are placed with various sizes and in various positions. An isolation zone is provided around active features. A scanning process of the feature layout surveys oxide density and nitride density over the wafer layer outside of said isolation zone. Values of the ratios of oxide/nitride density for two or more length scales which define tiling zones, are calculated. Tile placement and sizing in the zones is dependent upon the oxide/nitride density ratio values; and further upon an oxide deposition model specific to the oxide used in the fabrication process and upon a polishing model of the CMP process being employed.

6056631, May 2, 2000

Oct 9, 1997

8/947600

Thomas M. Brown - Austin TX
Peter Austin Burke - Austin TX

Advanced Micro Devices, Inc. - Austin TX

B24B 722

451288

The present disclosure relates to a chemical mechanical polishing apparatus used for polishing wafers. The apparatus includes a polish platen and structure for separating the platen into at least first and second zones such that polishing fluid used in the first zone is prevented from entering the second zone.