TERRISA ANN DUENAS
Pilots at Bayview Ave, Ventura, CA
License number
California A4856407
Issued Date
Sep 2016
Expiration Date
Mar 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
321 Bayview Ave, Ventura, CA 93003
Professional information
Active Pen Nanolithography
US Patent:
8261662, Sep 11, 2012
Filed:
Nov 8, 2005
Appl. No.:
11/268740
Inventors:
Raymond Roger Shile - Los Gatos CA, US
Terrisa Duenas - Ventura CA, US
John Edward Bussan - Naperville IL, US
Gregory J. Athas - Lisle IL, US
Joseph S. Fragala - San Jose CA, US
Jason R. Haaheim - Chicago IL, US
Sylvain Cruchon-Dupeyrat - Chicago IL, US
Jeffrey R. Rendlen - Glen Ellyn IL, US
Terrisa Duenas - Ventura CA, US
John Edward Bussan - Naperville IL, US
Gregory J. Athas - Lisle IL, US
Joseph S. Fragala - San Jose CA, US
Jason R. Haaheim - Chicago IL, US
Sylvain Cruchon-Dupeyrat - Chicago IL, US
Jeffrey R. Rendlen - Glen Ellyn IL, US
Assignee:
Nanolnk, Inc. - Skokie IL
International Classification:
H01L 21/02
US Classification:
101327, 977851
Abstract:
Improved actuated probes suitable for scanning probe lithography or microscopy, and especially direct-write nanolithography and method of fabrication thereof. In one embodiment, thermomechanically actuated cantilevers with oxide-sharpened microcast tips are inexpensively fabricated by a process that comprises low-temperature wafer bonding, such as (gold) thermocompressive bonding, eutectic or adhesive bonding. Also provided is a flexcircuit that electrically interconnects the actuated probes to external circuitry and mechanically couples them to the instrument actuator. An improved scanning probe lithography instrument, hardware and software, can be built around the actuated cantilevers and the flexcircuit. Finally, provided is an improved microfluidic circuit to deliver chemical compounds to the tips of (actuated) probes and a fabrication method for tall, high-aspect-ratio tips.
Semiconductor Strain Gauge Array
US Patent:
2012003, Feb 9, 2012
Filed:
Aug 4, 2011
Appl. No.:
13/136572
Inventors:
Terrisa Duenas - Ventura CA, US
Shiv Joshi - Rancho Palos Verdes CA, US
Cesar Del Solar - Alhambra CA, US
Shiv Joshi - Rancho Palos Verdes CA, US
Cesar Del Solar - Alhambra CA, US
International Classification:
G01B 7/16, H01L 21/02
US Classification:
73777, 438 50, 257E21002
Abstract:
A strain monitoring system including an array of semiconductor strain gauges. Each strain gauge in the array of strain gauges includes a lithographically fabricated 4-resistor bridge for providing a voltage potential corresponding to the strain in the bridge and thin film transistors to provide addressability to each 4-resistor bridge in the array. After completion of the array of strain gauges, in preferred embodiments the array of strain gauges are transferred to polyimide film which is in turn bonded to a surface region of the component to be tested for strains. Each bridge provides voltage signals corresponding to the strain to which the material under the bridge is being subjected. In preferred embodiments control and data acquisition function are separated from the semiconductor strain gage array. Preferred embodiments the system are utilized to monitor strains on components of aircraft, especially light weight robotic aircraft.