TAM K TRAN
Electrician in San Jose, CA

License number
Massachusetts 51395
Issued Date
May 6, 2003
Expiration Date
Jul 31, 2007
Type
Journeyman Electrician
Address
Address
San Jose, CA 95133

Professional information

Tam Tran Photo 1

Freelance Graphic Designer

Position:
Freelance Graphic Designer at Tam Tran Design
Location:
San Jose, California
Industry:
Graphic Design
Work:
Tam Tran Design - San Francisco Bay Area since 2007 - Freelance Graphic Designer Arroyo & Company - San Francisco Apr 2008 - Nov 2012 - Senior Graphic Designer Grandview Marketing Apr 2007 - Aug 2008 - Intern Graphic Design Tibetan Aid Project Feb 2007 - May 2007 - Volunteer Graphic Designer Animal Asia Foundation Oct 2005 - Nov 2005 - Volunteer Graphic Designer
Education:
Art Institute of California - San Francisco 2003 - 2007
B.S., Graphic Design
Silver Creek High School 2000 - 2003
Skills:
Graphic Design, Print, Graphics, Brochures, Photoshop, Production, Illustrator, Logo Design, Layout, Corporate Identity, Promotions, InDesign, Posters, Illustration, Packaging, Logos, Advertising, Adobe Creative Suite, Newsletters, Annual Reports, Pre-press, Books, Dreamweaver, Direct Mail, Flyers, Typography, Banners, Editing, Visual Communication, Invitations, Business Cards, Web Design
Languages:
Vietnamese


Tam Tran Photo 2

Tam Tran - San Jose, CA

Work:
Naprotek, Inc
Test Engineer / Test Department Manager
Hewlett-Packard Company / MSL Laser Jet Division - San Jose, CA
Test Engineer
Power Integrations Inc - Sunnyvale, CA
Test Engineer / Senior Test Supervisor
Sierra Semiconductor Corp - San Jose, CA
Senior Wafer Fab Test Supervisor
Education:
San Jose State University - San Jose, CA
BS in Electrical Engineering


Tam Tran Photo 3

Method To Turn A Flash Memory Into A Versatile, Low-Cost Multiple Time Programmable Eprom

US Patent:
6563742, May 13, 2003
Filed:
Mar 4, 2002
Appl. No.:
10/090356
Inventors:
Peter W. Lee - Saratoga CA
Tam H. Tran - San Jose CA
Assignee:
Aplus Flash Technology, Inc. - San Jose CA
International Classification:
G11C 1600
US Classification:
36518529, 365 63, 36518522
Abstract:
A multiple time programmable (MTP) memory device is achieved. The device comprises, first, a memory cell array including a means of electrical erasability and electrical programmability. The memory cell array comprises, preferably, a Flash memory cell array. A package has an external pin configuration that conforms to the JEDEC standard for an EPROM device wherein an external, positive programming voltage (VPP) pin is provided. Finally, an external, negative erasing voltage (VNN) pin is provided. The VNN pin is, preferably, multiplexed with the chip enable bar (CEB) pin.


Tam Tran Photo 4

Bit-By-Bit Vt-Correction Operation For Nonvolatile Semiconductor One-Transistor Cell, Nor-Type Flash Eeprom

US Patent:
6515910, Feb 4, 2003
Filed:
Feb 15, 2002
Appl. No.:
10/076826
Inventors:
Peter W. Lee - Saratoga CA
Hsing-Ya Tsao - San Jose CA
Tam Tran - San Jose CA
Fu-Chang Hsu - San Jose CA
Assignee:
Aplus Flash Technology Inc. - San Jose CA
International Classification:
G11C 1606
US Classification:
36518522, 36518529, 3651853, 36518509
Abstract:
A method to test the erase condition of memory cells in a memory array device is achieved. The method is further extended to methods to detect and correct under erase and over erase conditions. The erase condition of a section of the memory array device is altered to form an erased section and non-erased sections. The control gates of the memory cells in the non-erased sections are forced to a normal off-state voltage sufficient to turn off erased cells. The control gates of the memory cells in non-selected subsections of the erased section are forced to a guaranteed off-state voltage that will turn off erased cells including those that are over erased. The control gates of the memory cells in a selected subsection of the erased section are forced to a check voltage. Thereafter, the bitline current of the selected subsection of the erased section is measured to determine erase condition of the selected subsection of the erase section.


Tam Tran Photo 5

Optimization Of Extensible Markup Language Path Language (Xpath) Expressions In A Database Management System Configured To Accept Extensible Markup Language (Xml) Queries

US Patent:
2009025, Oct 15, 2009
Filed:
Apr 10, 2008
Appl. No.:
12/101141
Inventors:
Andrey Balmin - San Jose CA, US
Fatma Ozcan - San Jose CA, US
Tam Minh Tran - San Jose CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G06F 7/06, G06F 17/30
US Classification:
707 4, 707E17005, 707E17017
Abstract:
An apparatus, system, and method are disclosed for optimization of XPath expressions in a database management system configured to accept XML queries. Operations of the method include receiving an XQuery representation and partitioning XPath expressions within the XQuery representation into a plurality of XPath expression clusters. The XPath expression clusters may comprise one or more XPath expressions and those in each cluster may operate on a common document. Furthermore, the XPath expressions in each cluster are hierarchically related to each other such that branch nodes of the cluster are executable independent of nodes in other XPath expression clusters. The method also defines merging the one or more XPath expressions into one or more expression trees for each XPath expression cluster. The method generates one or more query execution plans from the one or more XPath expression blocks. The method includes, for each query execution plan, splitting each of the XPath expression blocks into one or more ordered fragments. The method determines a cardinality according to database statistics and an execution cost for each XPath expression block within each query execution plan. Finally, the method determines an aggregate cardinality for each query execution plan and an aggregate execution cost for each query execution plan. Therefore, an XQuery may be optimized at both the global XQuery and local XPath expression block level, improving performance and reducing overhead.


Tam Tran Photo 6

Selectivity Estimation For Conjunctive Predicates In The Presence Of Partial Knowledge About Multivariate Data Distributions

US Patent:
2007002, Feb 1, 2007
Filed:
Jul 28, 2005
Appl. No.:
11/190947
Inventors:
Marcel Kutsch - Koeln, DE
Volker Markl - San Jose CA, US
Nimrod Megiddo - Palo Alto CA, US
Tam Minh Tran - San Jose CA, US
International Classification:
G06F 17/30
US Classification:
707002000
Abstract:
A method for consistent selectivity estimation based on the principle of maximum entropy (ME) is provided. The method efficiently exploits all available information and avoids the bias problem. In the absence of detailed knowledge, the ME approach reduces to standard uniformity and independence assumptions. The disclosed method, based on the principle of ME, is used to improve the optimizer's cardinality estimates by orders of magnitude, resulting in better plan quality and significantly reduced query execution times.


Tam Tran Photo 7

Method And System For Estimating Cardinality In A Database System

US Patent:
2007023, Oct 4, 2007
Filed:
Apr 3, 2006
Appl. No.:
11/278532
Inventors:
Vincent Corvinelli - Mississauga, CA
Yuri Deigin - Richmond Hill, CA
John Hornibrook - Markham, CA
Tam Tran - San Jose CA, US
International Classification:
G06F 17/30
US Classification:
707001000
Abstract:
A method and system for estimating cardinalities for a plurality of columns in a database system is disclosed. The method and system include obtaining statistics collected for the plurality of columns. A first portion of the statistics indicates at least one relationship between at least a portion of the plurality of columns, while a second portion of the statistics includes single column statistics. The method and system also include utilizing the first portion and the second portion of the statistics to estimate the cardinality for the plurality of columns.


Tam Tran Photo 8

Low Voltage Cmos Bandgap Reference

US Patent:
6943617, Sep 13, 2005
Filed:
Dec 29, 2003
Appl. No.:
10/748540
Inventors:
Hieu Van Tran - San Jose CA, US
Tam Huu Tran - San Jose CA, US
Vishal Sarin - Santa Clara CA, US
Anh Ly - San Jose CA, US
Niang Hangzo - San Jose CA, US
Sang Thanh Nguyen - Union City CA, US
Assignee:
Silicon Storage Technology, Inc. - Sunnyvale CA
International Classification:
G05F001/10
US Classification:
327539
Abstract:
A bandgap reference generator comprises a PMOS transistor and NMOS transistor in a pnp bipolar junction transistor connected in series in a first leg. The bandgap reference generator includes a second leg that includes a PMOS transistor, an NMOS transistor, a resistor and a pnp bipolar junction transistor. A bias circuit provides a bias to a mirror formed by the gates of the PMOS transistors to lower the operating voltage of the bandgap reference generator. A second biasing circuit may provide bias to the mirror formed of the NMOS transistors. A time-based and a DC bias-based start up circuitry and method is provided.