Inventors:
Sylvia W. Thomas - Orlando FL, US
Michael Jay Parrish - St. Cloud FL, US
Tony G. Ivanov - Orlando FL, US
Edward Belden Harris - Orlando FL, US
Richard William Gregor - Winter Park FL, US
Michael Scott Carroll - Orlando FL, US
Assignee:
Agere Systems, Inc. - Allentown PA
International Classification:
H01L 27108
Abstract:
A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in the dielectric material of the metal layer and the capacitor includes a first capacitor electrode formed within the recess in electrical contact with the device component of the metallization layer. An insulator may be formed over the first capacitor electrode, with a second capacitor electrode formed over the insulator. These elements are preferably conformally deposited within the trench, thereby forming a recess, a portion of which extends within the trench. A subsequently fabricated device component may then be placed in electrical contact with the second capacitor electrode.