STUART M SPITZER
Broker in South Lynnfield, MA

2001001, Aug 9, 2001

Apr 14, 1997

08/839687

STUART M. SPITZER - LYNNFIELD MA, US
JAMES R. TOKER - CAMBRIDGE MA, US
SELIM S. BENCUYA - NEWTON MA, US

H04N003/14, H04N005/335

348/243000, 348/297000

A camera is described which is capable of meeting the United States standards for high definition television (HDTV). The camera produces a display of 1280 pixels by 720 pixels at a rate of 60 frames per second. In the preferred embodiment, there is provided, as an image sensor, a frame transfer three phase buried channel CCD capable of shifting the charge from an imaging region to a storage region within a brief blanking period provided by a shuttered lens. The image sensor has an arrangement of spaced electrodes which are electrically connected to shunts in the image sensor to transport charge, but are also arranged in the imaging region such that the geometry of the electrodes within each of the plurality of pixels is similar and thereby reduce the resistance present during shifting the charge from the imaging region to the storage region. The image sensor further minimizes the effect of dark current from the storage section on a reproduced image, and provides for amplification of the image prior to the introduction of substantial noise. Additional embodiments are described wherein: i) an anti-reflective coating minimizes distortion of the reproduced image without contamination of the camera; ii) the camera is capable of reproducing images at a variable frame rate; and, iii) the image sensor is capable of operating either in a progressive-scan mode or an interlace-scan mode.

7379317, May 27, 2008

Dec 23, 2004

11/021958

Colin S. Bill - Cupertino CA, US
Swaroop Kaza - Woburn MA, US
Tzu-Ning Fang - Palo Alto CA, US
Stuart Spitzer - Lynnfield MA, US

Spansion LLC - Sunnyvale CA

G11C 5/06, G11C 17/06

365 72, 365105, 365115, 365175

A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set. An electrical potential is applied across a selected memory-diode, from higher to lower potential in the forward direction, intended to program the selected memory-diode. During this intended programming, each other memory-diode in the array has provided thereacross in the forward direction thereof an electrical potential lower than its threshold voltage. The threshold voltage of each memory-diode can be established by applying an electrical potential across that memory-diode from higher to lower potential in the reverse direction. By so establishing a sufficient threshold voltage, and by selecting appropriate electrical potentials applied to conductors of the array, problems related to current leakage and disturb are avoided.

7122853, Oct 17, 2006

Aug 17, 2004

10/919872

David Gaun - Brookline MA, US
Stuart Spitzer - Lynnfield MA, US
Nicolay F Yudanov - Brookline MA, US

FASL, Inc. - Sunnyvale CA

H01L 35/24, H01L 51/00

257295, 257 40, 257E27078, 257E293, 438 3, 438 82, 438 99

Systems and methodologies are provided for simplifying a polymer memory cell's operation by employing a post polymer growth treatment to form ionic or super ionic metal compounds therein. Such post polymer growth treatment facilitates distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell, and mitigates (or eliminates) a need for initialization procedures. Moreover, the post treatment of the present invention can also facilitate controlling a distribution of various thresholds (e. g. , write and erase threshold), and set them to predetermined values Accordingly, variability in threshold values of polymer memory cells that can result from initialization processes can be mitigated (or eliminated), and thicker polymer layers can be employed without an initialization penalty.

7289353, Oct 30, 2007

Aug 17, 2004

10/919846

Stuart Spitzer - Lynnfield MA, US
Juri H Krieger - Brookline MA, US
David Gaun - Brookline MA, US

Spansion, LLC - Sunnyvale CA

G11C 11/00, G11C 11/34

365151, 36518518, 36518519, 36518529

Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's operation by applying thereupon a regulated electric field and/or voltage pulse width, during a post fabrication stage. Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell, to increase flexibility in circuit design. Accordingly, the present invention supplies both a current-voltage domain, and/or a frequency-time domain, to facilitate adjusting the program thresholds of the polymer memory cell.

7307338, Dec 11, 2007

Jul 26, 2004

10/899344

Aaron Mandell - Boston MA, US
Juri H Krieger - Brookline MA, US
Igor Sokolik - East Boston MA, US
Richard P Kingsborough - Acton MA, US
Stuart Spitzer - Lynnfield MA, US

Spansion LLC - Sunnyvale CA

H01L 23/58

257643, 257 40, 257642, 257E2917, 257E51023, 257E21024, 257E27104

Systems and methodologies are provided for forming three dimensional memory structures that are fabricated from blocks of individual polymer memory cells stacked on top of each other. Such a polymer memory structure can be formed on top of control component circuitries employed for programming a plurality of memory cells that form the stacked three dimensional structure. Such an arrangement provides for an efficient placement of polymer memory cell on a wafer surface, and increases amount of die space available for circuit design.

2006024, Nov 2, 2006

May 2, 2005

11/119973

Juri Krieger - Brookline MA, US
Stuart Spitzer - Lynnfield MA, US

G11C 11/36

365115000

Systems and methodologies are provided for forming a diode component operative (e.g., connected in series) with active and passive layer of a resistance switching memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a memory cell having a passive and active layer. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of the array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.

7344913, Mar 18, 2008

Apr 6, 2005

11/099847

Richard P. Kingsborough - North Chelmsford MA, US
William Leonard - Brookline MA, US
Igor Sokolik - East Boston MA, US
Stuart Spitzer - Lynnfield MA, US
Zhida Lan - Cupertino CA, US

Spansion LLC - Sunnyvale CA

H01L 51/40

438 99, 438622, 438681, 438687, 438762, 438780

A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techniques and contains an organic semiconductor doped with a metal salt.

2007000, Jan 11, 2007

Jul 5, 2005

11/174861

Igor Sokolik - East Boston MA, US
Richard Kingsborough - Acton MA, US
David Gaun - Brookline MA, US
Swaroop Kaza - Woburn MA, US
Stuart Spitzer - Lynnfield MA, US
Suzette Pangrle - Cupertino CA, US

H01L 29/792

257326000

The present memory device includes first and second electrodes, a passive layer between the first and second electrodes and an active layer between the first and second electrodes, the active layer being of a material containing randomly oriented pores which are interconnected to form passages through the active layer.

7378682, May 27, 2008

Feb 7, 2005

11/052688

David Gaun - Brookline MA, US
Swaroop Kaza - Woburn MA, US
Stuart Spitzer - Lynnfield MA, US
Juri Krieger - Brookline MA, US
Richard Kingsborough - Acton MA, US

Spanson LLC - Sunnyvale CA

H01L 51/00

257 40, 257642, 257643, 257E21011, 257E51027, 257E5103, 438 99, 438190

The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i. e. , preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

7269050, Sep 11, 2007

Jun 7, 2005

11/146690

Swaroop Kaza - Woburn MA, US
David Gaun - Brookline MA, US
Stuart Spitzer - Lynnfield MA, US
Juri Krieger - Brookline MA, US

Spansion LLC - Sunnyvale CA

G11C 11/22

365145, 36518503

The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so determined state of the memory device.